STF3N62K3
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STMicroelectronics STF3N62K3

Manufacturer No:
STF3N62K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 620V 2.7A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF3N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, leveraging the advanced MDmesh™ K3 technology. This device is designed to offer extremely low on-resistance, superior dynamic performance, and high avalanche capability, making it suitable for the most demanding applications. The STF3N62K3 features a new optimized vertical structure that enhances its overall performance and reliability.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 620 V
RDS(on) (On-Resistance) 2.2 Ω
ID (Drain Current) 2.7 A
Package TO-220FP, D2PAK, DPAK
Operating Temperature Range -55 to 150 °C
RoHS Compliance Ecopack2

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications

The STF3N62K3 is suitable for a variety of high-performance applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Data Centers
  • Solar Microinverters
  • Industrial and Automotive systems

Q & A

  1. What is the maximum drain-source voltage of the STF3N62K3?

    The maximum drain-source voltage (VDS) is 620 V.

  2. What is the typical on-resistance of the STF3N62K3?

    The typical on-resistance (RDS(on)) is 2.2 Ω.

  3. What is the maximum drain current of the STF3N62K3?

    The maximum drain current (ID) is 2.7 A.

  4. In which packages is the STF3N62K3 available?

    The STF3N62K3 is available in TO-220FP, D2PAK, and DPAK packages.

  5. What are the key features of the STF3N62K3?

    The key features include 100% avalanche testing, extremely high dv/dt capability, very low intrinsic capacitance, improved diode reverse recovery characteristics, and Zener protection.

  6. What are some typical applications for the STF3N62K3?

    Typical applications include Switch Mode Power Supplies (SMPS), data centers, solar microinverters, and industrial and automotive systems.

  7. Is the STF3N62K3 RoHS compliant?

    Yes, the STF3N62K3 is RoHS compliant with an Ecopack2 rating.

  8. What is the operating temperature range of the STF3N62K3?

    The operating temperature range is from -55°C to 150°C.

  9. Where can I find detailed specifications and datasheets for the STF3N62K3?

    Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Digi-Key, Mouser, etc.

  10. What is the significance of MDmesh™ K3 technology in the STF3N62K3?

    The MDmesh™ K3 technology enhances the device's performance by providing extremely low on-resistance, superior dynamic performance, and high avalanche capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STD3N62K3
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STU3N62K3
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Similar Products

Part Number STF3N62K3 STF6N62K3 STF5N62K3 STF4N62K3 STF2N62K3 STF3LN62K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 620 V 620 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc) 5.5A (Tc) 4.2A (Tc) 3.8A (Tc) 2.2A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V 1.28Ohm @ 2.8A, 10V 1.6Ohm @ 2.1A, 10V 2Ohm @ 1.9A, 10V 3.6Ohm @ 1.1A, 10V 3Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 34 nC @ 10 V 26 nC @ 10 V 22 nC @ 10 V 15 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 25 V 875 pF @ 50 V 680 pF @ 50 V 550 pF @ 50 V 340 pF @ 50 V 386 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 20W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 20W (Tc) 20W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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