Overview
The STF6N62K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced MDmesh K3 technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. The STF6N62K3 is packaged in a TO-220FP package, which is environmentally compliant and available in different ECOPACK grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 620 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 5.5 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 3 | A |
| Pulsed Drain Current (IDM) | 22 | A |
| On-Resistance (RDS(on)) max. | 1.2 Ω | Ω |
| Total Power Dissipation at TC = 25 °C | 30 | W |
| Thermal Resistance, Junction-to-Case (RthJC) | 4.17 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 62.5 | °C/W |
| Avalanche Current (IAR) | 5.5 | A |
| Single Pulse Avalanche Energy (EAS) | 140 | mJ |
Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
- Low on-resistance (RDS(on)) of 1.2 Ω max.
- High continuous drain current of 5.5 A at TC = 25 °C
Applications
The STF6N62K3 is primarily designed for switching applications, where its high performance and robust characteristics make it an ideal choice. These applications include but are not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Industrial and automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source voltage (VDS) of the STF6N62K3?
The maximum drain-source voltage (VDS) is 620 V.
- What is the typical on-resistance (RDS(on)) of the STF6N62K3?
The typical on-resistance (RDS(on)) is 0.95 Ω, with a maximum of 1.2 Ω.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 5.5 A.
- What is the thermal resistance, junction-to-case (RthJC), of the STF6N62K3?
The thermal resistance, junction-to-case (RthJC), is 4.17 °C/W.
- What is the single pulse avalanche energy (EAS) of the STF6N62K3?
The single pulse avalanche energy (EAS) is 140 mJ.
- Is the STF6N62K3 Zener-protected?
Yes, the STF6N62K3 is Zener-protected.
- What are the key features of the STF6N62K3?
The key features include 100% avalanche testing, extremely high dv/dt capability, very low intrinsic capacitance, improved diode reverse recovery characteristics, and Zener protection.
- In what package is the STF6N62K3 available?
The STF6N62K3 is available in the TO-220FP package.
- What are the typical applications of the STF6N62K3?
The typical applications include switching applications such as power supplies, motor control, high-frequency switching circuits, and industrial and automotive systems.
- What is the storage temperature range for the STF6N62K3?
The storage temperature range is from -55 °C to 150 °C.
