STD14NM50N
  • Share:

STMicroelectronics STD14NM50N

Manufacturer No:
STD14NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD14NM50N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. Although this device is currently obsolete and no longer manufactured, it was designed to offer high performance and reliability in various power management applications. The MDmesh™ II technology enhances the device's electrical characteristics, making it suitable for demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)500 V
RDS(on) (On-Resistance)0.28 Ω (typ.) / 0.246 Ω (min.)
ID (Drain Current)12 A
PackageDPAK
Avalanche Capability100% avalanche tested
Zener ProtectionZener-protected

Key Features

  • MDmesh™ II technology for improved electrical characteristics
  • High voltage rating of 500 V
  • Low on-resistance (RDS(on)) of 0.28 Ω (typ.)
  • High drain current capability of 12 A
  • 100% avalanche tested for robustness
  • Zener-protected for enhanced reliability
  • DPAK package for efficient heat dissipation and compact design

Applications

The STD14NM50N is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the drain-source voltage rating of the STD14NM50N?
    The drain-source voltage rating is 500 V.
  2. What is the typical on-resistance of the STD14NM50N?
    The typical on-resistance is 0.28 Ω.
  3. What is the maximum drain current of the STD14NM50N?
    The maximum drain current is 12 A.
  4. What package type is the STD14NM50N available in?
    The STD14NM50N is available in a DPAK package.
  5. Is the STD14NM50N avalanche tested?
    Yes, the STD14NM50N is 100% avalanche tested.
  6. Is the STD14NM50N Zener-protected?
    Yes, the STD14NM50N is Zener-protected.
  7. What technology is used in the STD14NM50N?
    The STD14NM50N uses the second generation of MDmesh™ technology.
  8. What are some typical applications of the STD14NM50N?
    Typical applications include flyback converters, LED lighting systems, and automotive systems.
  9. Is the STD14NM50N still in production?
    No, the STD14NM50N is obsolete and no longer manufactured.
  10. Where can I find substitutes for the STD14NM50N?
    Substitutes can be found through various electronic component distributors and the official STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
62

Please send RFQ , we will respond immediately.

Same Series
STB14NM50N
STB14NM50N
MOSFET N-CH 500V 12A D2PAK

Similar Products

Part Number STD14NM50N STD10NM50N STD11NM50N STD12NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 7A (Tc) 8.5A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V 940 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 70W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO