STD14NM50N
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STMicroelectronics STD14NM50N

Manufacturer No:
STD14NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD14NM50N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. Although this device is currently obsolete and no longer manufactured, it was designed to offer high performance and reliability in various power management applications. The MDmesh™ II technology enhances the device's electrical characteristics, making it suitable for demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)500 V
RDS(on) (On-Resistance)0.28 Ω (typ.) / 0.246 Ω (min.)
ID (Drain Current)12 A
PackageDPAK
Avalanche Capability100% avalanche tested
Zener ProtectionZener-protected

Key Features

  • MDmesh™ II technology for improved electrical characteristics
  • High voltage rating of 500 V
  • Low on-resistance (RDS(on)) of 0.28 Ω (typ.)
  • High drain current capability of 12 A
  • 100% avalanche tested for robustness
  • Zener-protected for enhanced reliability
  • DPAK package for efficient heat dissipation and compact design

Applications

The STD14NM50N is ideal for various power management applications, including:

  • Flyback converters
  • LED lighting systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the drain-source voltage rating of the STD14NM50N?
    The drain-source voltage rating is 500 V.
  2. What is the typical on-resistance of the STD14NM50N?
    The typical on-resistance is 0.28 Ω.
  3. What is the maximum drain current of the STD14NM50N?
    The maximum drain current is 12 A.
  4. What package type is the STD14NM50N available in?
    The STD14NM50N is available in a DPAK package.
  5. Is the STD14NM50N avalanche tested?
    Yes, the STD14NM50N is 100% avalanche tested.
  6. Is the STD14NM50N Zener-protected?
    Yes, the STD14NM50N is Zener-protected.
  7. What technology is used in the STD14NM50N?
    The STD14NM50N uses the second generation of MDmesh™ technology.
  8. What are some typical applications of the STD14NM50N?
    Typical applications include flyback converters, LED lighting systems, and automotive systems.
  9. Is the STD14NM50N still in production?
    No, the STD14NM50N is obsolete and no longer manufactured.
  10. Where can I find substitutes for the STD14NM50N?
    Substitutes can be found through various electronic component distributors and the official STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB14NM50N
STB14NM50N
MOSFET N-CH 500V 12A D2PAK

Similar Products

Part Number STD14NM50N STD10NM50N STD11NM50N STD12NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 7A (Tc) 8.5A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V 940 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 70W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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