STD12NM50N
  • Share:

STMicroelectronics STD12NM50N

Manufacturer No:
STD12NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 11A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12NM50N is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the second generation of MDmesh™ Technology, which combines a new vertical structure with the company’s strip layout to achieve one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters.

The STD12NM50N is available in the DPAK package and is known for its low input capacitance, low gate charge, and low gate input resistance. These features contribute to its high efficiency and reliability in various switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Drain-Source Breakdown Voltage (V(BR)DSS) 500 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 6.7 A
Pulsed Drain Current (IDM) 44 A
Static Drain-Source On Resistance (RDS(on)) < 0.38 Ω
Gate Threshold Voltage (VGS(th)) 2-4 V
Thermal Resistance Junction-Case (Rthj-case) 1.25 °C/W
Thermal Resistance Junction-Ambient (Rthj-a) 62.5 °C/W

Key Features

  • Low On-Resistance and Gate Charge: Achieved through the second generation of MDmesh™ Technology, making it suitable for high-efficiency converters.
  • Low Input Capacitance and Gate Charge: Enhances switching performance and reduces power losses.
  • Low Gate Input Resistance: Improves gate drive efficiency.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
  • ECOPACK® Packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97, meeting environmental requirements.

Applications

  • Switching Applications: Ideal for high-frequency switching in power supplies, motor drives, and other high-efficiency converter applications.
  • Power Supplies: Suitable for use in SMPS (Switch-Mode Power Supplies) due to its high efficiency and low power losses.
  • Motor Drives: Used in motor control circuits where high current handling and low on-resistance are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD12NM50N?

    The maximum drain-source voltage (VDS) is 500V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 11A.

  3. What is the static drain-source on resistance (RDS(on)) of the STD12NM50N?

    The static drain-source on resistance (RDS(on)) is less than 0.38Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2-4V.

  5. Is the STD12NM50N 100% avalanche tested?

    Yes, the STD12NM50N is 100% avalanche tested.

  6. What type of package is the STD12NM50N available in?

    The STD12NM50N is available in the DPAK package.

  7. What is the thermal resistance junction-case (Rthj-case) for the DPAK package?

    The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.25°C/W.

  8. What are the typical applications of the STD12NM50N?

    The STD12NM50N is typically used in switching applications, power supplies, and motor drives.

  9. Is the STD12NM50N compliant with environmental standards?

    Yes, the STD12NM50N is available in ECOPACK® packages, which are lead-free and compliant with JEDEC Standard JESD97.

  10. What is the maximum operating junction temperature of the STD12NM50N?

    The maximum operating junction temperature is 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
123

Please send RFQ , we will respond immediately.

Same Series
STF12NM50N
STF12NM50N
MOSFET N-CH 500V 11A TO220FP
STP12NM50N
STP12NM50N
MOSFET N-CH 500V 11A TO220AB
STB12NM50N
STB12NM50N
MOSFET N-CH 500V 11A D2PAK
STI12NM50N
STI12NM50N
MOSFET N-CH 500V 11A I2PAK

Similar Products

Part Number STD12NM50N STD12NM50ND STD14NM50N STD10NM50N STD11NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc) 12A (Tc) 7A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V 27 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 50 V 850 pF @ 50 V 816 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 100W (Tc) 100W (Tc) 90W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3