STD12NM50N
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STMicroelectronics STD12NM50N

Manufacturer No:
STD12NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 11A DPAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12NM50N is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the second generation of MDmesh™ Technology, which combines a new vertical structure with the company’s strip layout to achieve one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters.

The STD12NM50N is available in the DPAK package and is known for its low input capacitance, low gate charge, and low gate input resistance. These features contribute to its high efficiency and reliability in various switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Drain-Source Breakdown Voltage (V(BR)DSS) 500 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 6.7 A
Pulsed Drain Current (IDM) 44 A
Static Drain-Source On Resistance (RDS(on)) < 0.38 Ω
Gate Threshold Voltage (VGS(th)) 2-4 V
Thermal Resistance Junction-Case (Rthj-case) 1.25 °C/W
Thermal Resistance Junction-Ambient (Rthj-a) 62.5 °C/W

Key Features

  • Low On-Resistance and Gate Charge: Achieved through the second generation of MDmesh™ Technology, making it suitable for high-efficiency converters.
  • Low Input Capacitance and Gate Charge: Enhances switching performance and reduces power losses.
  • Low Gate Input Resistance: Improves gate drive efficiency.
  • 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
  • ECOPACK® Packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97, meeting environmental requirements.

Applications

  • Switching Applications: Ideal for high-frequency switching in power supplies, motor drives, and other high-efficiency converter applications.
  • Power Supplies: Suitable for use in SMPS (Switch-Mode Power Supplies) due to its high efficiency and low power losses.
  • Motor Drives: Used in motor control circuits where high current handling and low on-resistance are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD12NM50N?

    The maximum drain-source voltage (VDS) is 500V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 11A.

  3. What is the static drain-source on resistance (RDS(on)) of the STD12NM50N?

    The static drain-source on resistance (RDS(on)) is less than 0.38Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2-4V.

  5. Is the STD12NM50N 100% avalanche tested?

    Yes, the STD12NM50N is 100% avalanche tested.

  6. What type of package is the STD12NM50N available in?

    The STD12NM50N is available in the DPAK package.

  7. What is the thermal resistance junction-case (Rthj-case) for the DPAK package?

    The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.25°C/W.

  8. What are the typical applications of the STD12NM50N?

    The STD12NM50N is typically used in switching applications, power supplies, and motor drives.

  9. Is the STD12NM50N compliant with environmental standards?

    Yes, the STD12NM50N is available in ECOPACK® packages, which are lead-free and compliant with JEDEC Standard JESD97.

  10. What is the maximum operating junction temperature of the STD12NM50N?

    The maximum operating junction temperature is 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD12NM50N STD12NM50ND STD14NM50N STD10NM50N STD11NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc) 12A (Tc) 7A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V 27 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 50 V 850 pF @ 50 V 816 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 100W (Tc) 100W (Tc) 90W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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