STD12NM50ND
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STMicroelectronics STD12NM50ND

Manufacturer No:
STD12NM50ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 11A DPAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STMicroelectronics STD12NM50ND is a high-performance N-channel MOSFET designed for various power management applications. This device utilizes STMicroelectronics' advanced FDMesh™ technology, which combines the benefits of MDmesh™ features with an intrinsic fast-recovery body diode. Although the STD12NM50ND is currently obsolete and no longer manufactured, it remains a notable example of high-voltage MOSFET design.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 800 V
ID (Drain Current) 11 A
RDS(on) (On-State Resistance) Not specified in provided sources, refer to datasheet for detailed information
Technology FDMesh™
Avalanche Capability 100% avalanche tested
Protection Zener-protected

Key Features

  • FDMesh™ Technology: Combines MDmesh™ features with an intrinsic fast-recovery body diode, enhancing performance and efficiency.
  • High Voltage Capability: Rated for 800 V drain-source voltage, making it suitable for high-voltage applications.
  • High Current Handling: Capable of handling up to 11 A of drain current.
  • Avalanche Tested: 100% avalanche tested to ensure robustness under extreme conditions.
  • Zener Protection: Includes Zener protection for enhanced reliability.

Applications

  • Flyback Converters: Ideal for use in flyback converter circuits due to its high voltage and current handling capabilities.
  • LED Lighting: Suitable for LED lighting applications requiring high efficiency and reliability.
  • Power Management Systems: Can be used in various power management systems where high voltage and current are required.

Q & A

  1. What is the drain-source voltage rating of the STD12NM50ND?

    The drain-source voltage rating of the STD12NM50ND is 800 V.

  2. What is the maximum drain current of the STD12NM50ND?

    The maximum drain current of the STD12NM50ND is 11 A.

  3. What technology is used in the STD12NM50ND?

    The STD12NM50ND uses FDMesh™ technology, which combines MDmesh™ features with an intrinsic fast-recovery body diode.

  4. Is the STD12NM50ND still in production?

    No, the STD12NM50ND is obsolete and no longer manufactured.

  5. What are some common applications for the STD12NM50ND?

    Common applications include flyback converters, LED lighting, and other power management systems.

  6. What kind of protection does the STD12NM50ND have?

    The STD12NM50ND includes Zener protection and is 100% avalanche tested.

  7. Where can I find detailed specifications for the STD12NM50ND?

    Detailed specifications can be found in the datasheet available from suppliers like Mouser and Digi-Key.

  8. What are some potential substitutes for the STD12NM50ND?

    Potential substitutes include other high-voltage MOSFETs such as the IPD50R380CEAUMA1 from Infineon.

  9. Why is FDMesh™ technology important in the STD12NM50ND?

    FDMesh™ technology enhances the performance and efficiency of the MOSFET by combining MDmesh™ features with an intrinsic fast-recovery body diode.

  10. Can the STD12NM50ND be used in high-current applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB12NM50ND
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STF12NM50ND
STF12NM50ND
MOSFET N-CH 500V 11A TO220FP

Similar Products

Part Number STD12NM50ND STD12NM50N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 940 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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