Overview
The STB12NM50T4 is an N-channel Power MOSFET developed by STMicroelectronics using their revolutionary MDmesh technology. This technology combines the multiple drain process with the company's PowerMESH horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The MOSFET is available in D²PAK, TO-220, and TO-220FP packages, making it versatile for various applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 500 | V |
| RDS(on) (Static Drain-Source On Resistance) | 0.30 - 0.35 | Ω |
| ID (Drain Current, continuous at TC = 25°C) | 12 | A |
| IDM (Drain Current, pulsed) | 48 | A |
| VGS (Gate-Source Voltage) | ±30 | V |
| TJ (Operating Junction Temperature) | -65 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.78 | °C/W |
| Qg (Total Gate Charge) | 28 | nC |
| td(on) (Turn-on Delay Time) | 20 | ns |
| tr (Rise Time) | 10 | ns |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- High dv/dt and excellent avalanche characteristics
- Tight process control and high manufacturing yields
- Available in D²PAK, TO-220, and TO-220FP packages
- ECOPACK compliant for environmental requirements
Applications
The STB12NM50T4 is primarily used in switching applications due to its high dv/dt and excellent avalanche characteristics. It is suitable for various power management and switching circuits where high efficiency and reliability are required.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB12NM50T4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STB12NM50T4?
The typical on-resistance (RDS(on)) is 0.30 - 0.35 Ω.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 12 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 48 A.
- What are the package options for the STB12NM50T4?
The STB12NM50T4 is available in D²PAK, TO-220, and TO-220FP packages.
- What is the thermal resistance junction-case (Rthj-case) for the D²PAK package?
The thermal resistance junction-case (Rthj-case) for the D²PAK package is 0.78 °C/W.
- What is the total gate charge (Qg)?
The total gate charge (Qg) is 28 nC.
- What is the turn-on delay time (td(on))?
The turn-on delay time (td(on)) is 20 ns.
- What is the rise time (tr)?
The rise time (tr) is 10 ns.
- Is the STB12NM50T4 100% avalanche tested?
Yes, the STB12NM50T4 is 100% avalanche tested.
- What are the primary applications of the STB12NM50T4?
The primary applications are in switching circuits due to its high dv/dt and excellent avalanche characteristics.
