Overview
The NVF2955T1G is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in the SOT-223 format and is lead-free and RoHS compliant. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. The NVF2955T1G is characterized by its low RDS(on) and high energy handling capabilities in both avalanche and commutation modes.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | -2.6 | A |
| Continuous Drain Current (TA = 85°C) | ID | -2.0 | A |
| Power Dissipation (TA = 25°C) | PD | 2.3 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -17 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 225 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Tab Thermal Resistance | RθJC | 14 | °C/W |
| Junction-to-Ambient Thermal Resistance (Note 1) | RθJA | 65 | °C/W |
| Junction-to-Ambient Thermal Resistance (Note 2) | RθJA | 150 | °C/W |
| Gate Threshold Voltage | VGS(TH) | -2.0 to -4.0 | V |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -0.75 A) | RDS(on) | 145 to 170 | mΩ |
Key Features
- Low RDS(on) for reduced power loss and improved efficiency.
- High energy handling in avalanche and commutation modes.
- AEC-Q101 qualified, making it suitable for automotive applications.
- Pb-free and RoHS compliant.
- High continuous drain current and power dissipation capabilities.
- Low gate threshold voltage for easy switching.
- High junction-to-ambient thermal resistance for reliable operation in various environments.
Applications
- Power Supplies: Ideal for high-efficiency power supply designs.
- PWM Motor Control: Suitable for pulse-width modulation motor control applications.
- Converters: Used in DC-DC converters and other power conversion circuits.
- Power Management: Effective in power management systems requiring low RDS(on) and high reliability.
Q & A
- What is the maximum drain-to-source voltage of the NVF2955T1G?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is -2.6 A at 25°C and -2.0 A at 85°C.
- Is the NVF2955T1G AEC-Q101 qualified?
Yes, the NVF2955T1G is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the typical RDS(on) of the NVF2955T1G?
The typical RDS(on) is 145 to 170 mΩ at VGS = -10 V and ID = -0.75 A.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from -55°C to 175°C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 225 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are the typical applications of the NVF2955T1G?
Typical applications include power supplies, PWM motor control, converters, and power management systems.
- Is the NVF2955T1G Pb-free and RoHS compliant?
Yes, the NVF2955T1G is Pb-free and RoHS compliant.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is -2.0 to -4.0 V.
