NTF2955T1G
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onsemi NTF2955T1G

Manufacturer No:
NTF2955T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.7A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF2955T1G is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in the SOT-223 (TO-261-4, SC-73) format and is RoHS compliant and Pb-free. It is known for its low on-resistance (RDS(on)) and its ability to withstand high energy in avalanche and commutation modes, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Symbol Value Unit
FET Type - P-Channel -
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID -2.6 A
Continuous Drain Current (TA = 85°C) ID -2.0 A
Power Dissipation (TA = 25°C) PD 2.3 W
Drain-Source On Resistance (RDS(on)) RDS(on) 145 mΩ (typical at VGS = -10 V, ID = -0.75 A)
Total Gate Charge QG(TOT) 14.3 nC nC
Package Style - SOT-223 (TO-261-4, SC-73) -
Mounting Method - Surface Mount -

Key Features

  • Low on-resistance (RDS(on)) of 145 mΩ (typical at VGS = -10 V, ID = -0.75 A).
  • Withstands high energy in avalanche and commutation modes.
  • AEC-Q101 qualified for the NVF2955 variant, indicating suitability for automotive applications.
  • Pb-free and RoHS compliant.
  • High continuous drain current of up to -2.6 A at TA = 25°C.
  • Maximum power dissipation of 2.3 W at TA = 25°C.

Applications

  • Power Supplies
  • PWM Motor Control
  • Converters
  • Power Management

Q & A

  1. What is the drain-to-source voltage rating of the NTF2955T1G?

    The drain-to-source voltage rating is -60 V.

  2. What is the typical on-resistance (RDS(on)) of the NTF2955T1G?

    The typical on-resistance is 145 mΩ at VGS = -10 V and ID = -0.75 A.

  3. What is the continuous drain current rating at 25°C?

    The continuous drain current rating is -2.6 A at TA = 25°C.

  4. Is the NTF2955T1G RoHS compliant and Pb-free?

    Yes, the NTF2955T1G is RoHS compliant and Pb-free.

  5. What are the typical applications of the NTF2955T1G?

    Typical applications include power supplies, PWM motor control, converters, and power management.

  6. What is the package style of the NTF2955T1G?

    The package style is SOT-223 (TO-261-4, SC-73).

  7. What is the maximum power dissipation at 25°C?

    The maximum power dissipation is 2.3 W at TA = 25°C.

  8. Is the NTF2955T1G AEC-Q101 qualified?

    The NVF2955 variant is AEC-Q101 qualified, but this specific model (NTF2955T1G) is not explicitly stated as AEC-Q101 qualified.

  9. What is the total gate charge of the NTF2955T1G?

    The total gate charge is 14.3 nC.

  10. What is the operating junction temperature range of the NTF2955T1G?

    The operating junction temperature range is -55°C to 175°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:492 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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In Stock

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Same Series
NVF2955T1G
NVF2955T1G
MOSFET P-CH 60V 2.6A SOT223
NVF2955PT1G
NVF2955PT1G
MOSFET P CH 60V 1.7A SOT223

Similar Products

Part Number NTF2955T1G NTF2955PT1G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 2.4A, 10V 185mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 14.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 25 V 492 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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