FDMA6676PZ
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onsemi FDMA6676PZ

Manufacturer No:
FDMA6676PZ
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET P-CH 30V 11A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA6676PZ is a single P-Channel MOSFET produced by ON Semiconductor. This device is characterized by its ultra-low resistance, making it highly suitable for power line load switching applications and reverse polarity protection. It belongs to the POWERTRENCH family, known for its advanced trench technology that enhances performance and efficiency in power management systems.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) -30 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) -23 A
RDS(on) (On-Resistance) 2.5 mΩ
PD (Power Dissipation) 150 W
TJ (Junction Temperature) -55 to 150 °C

Key Features

The FDMA6676PZ boasts several key features that make it an excellent choice for various power management applications:

  • Ultra-Low On-Resistance: With an RDS(on) of 2.5 mΩ, this MOSFET minimizes power losses and enhances efficiency.
  • High Current Capability: It can handle a continuous drain current of -23 A, making it suitable for high-power applications.
  • Advanced Trench Technology: Part of the POWERTRENCH family, this MOSFET leverages advanced trench technology to improve performance and reduce thermal resistance.
  • Reverse Polarity Protection: Designed to provide robust protection against reverse polarity conditions, ensuring system reliability.

Applications

The FDMA6676PZ is designed for a variety of power management applications, including:

  • Power Line Load Switching: Ideal for switching high-current loads in power lines due to its low on-resistance and high current handling capability.
  • Reverse Polarity Protection: Used to protect systems from reverse polarity conditions, ensuring the integrity and reliability of the system.
  • High-Power DC-DC Converters: Suitable for use in high-power DC-DC converters where low on-resistance and high efficiency are critical.

Q & A

  1. What is the FDMA6676PZ MOSFET used for?

    The FDMA6676PZ is used for power line load switching applications and reverse polarity protection due to its ultra-low on-resistance and high current handling capability.

  2. What is the maximum continuous drain current of the FDMA6676PZ?

    The maximum continuous drain current of the FDMA6676PZ is -23 A.

  3. What is the on-resistance (RDS(on)) of the FDMA6676PZ?

    The on-resistance (RDS(on)) of the FDMA6676PZ is 2.5 mΩ.

  4. What is the maximum junction temperature for the FDMA6676PZ?

    The maximum junction temperature for the FDMA6676PZ is 150°C.

  5. What technology does the FDMA6676PZ use?

    The FDMA6676PZ uses advanced trench technology as part of the POWERTRENCH family.

  6. What are some common applications of the FDMA6676PZ?

    Common applications include power line load switching, reverse polarity protection, and high-power DC-DC converters.

  7. What is the maximum drain-source voltage (VDS) for the FDMA6676PZ?

    The maximum drain-source voltage (VDS) for the FDMA6676PZ is -30 V.

  8. What is the maximum gate-source voltage (VGS) for the FDMA6676PZ?

    The maximum gate-source voltage (VGS) for the FDMA6676PZ is ±20 V.

  9. Is the FDMA6676PZ suitable for high-power applications?

    Yes, the FDMA6676PZ is suitable for high-power applications due to its high current handling capability and low on-resistance.

  10. Where can I find detailed specifications for the FDMA6676PZ?

    Detailed specifications for the FDMA6676PZ can be found in the datasheet available on ON Semiconductor's official website and other electronic component databases.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2160 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-PowerWDFN
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