STL220N6F7
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STMicroelectronics STL220N6F7

Manufacturer No:
STL220N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 120A POWERFLAT
Delivery:
Payment:
iso14001
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iso13485

Product Introduction

Overview

The STL220N6F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This technology features an enhanced trench gate structure, which results in very low on-state resistance (RDS(on)), reduced internal capacitance, and lower gate charge. These characteristics enable faster and more efficient switching, making the STL220N6F7 an ideal choice for high-performance applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 1.4 mΩ (max)
ID (Drain Current) 120 A
Package PowerFLAT 5x6
Operating Temperature (°C) -40 to 150
RoHS Compliance Ecopack2

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
  • Excellent Figure of Merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for improved EMI immunity.
  • High avalanche ruggedness, enhancing reliability under harsh conditions.

Applications

  • Communications equipment and networking devices.
  • Computers and peripherals requiring high-power switching.
  • Industrial applications, including motor control and power supplies.
  • Brushless DC (BLDC) motor drivers, as seen in the X-NUCLEO-IHM08M1 expansion board for STM32 Nucleo boards.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL220N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL220N6F7?

    The typical on-state resistance (RDS(on)) is 1.4 mΩ (max).

  3. What is the maximum drain current (ID) of the STL220N6F7?

    The maximum drain current (ID) is 120 A.

  4. What package type is the STL220N6F7 available in?

    The STL220N6F7 is available in the PowerFLAT 5x6 package.

  5. What is the operating temperature range of the STL220N6F7?

    The operating temperature range is -40 to 150°C.

  6. Is the STL220N6F7 RoHS compliant?

    Yes, the STL220N6F7 is RoHS compliant with an Ecopack2 grade.

  7. What technology does the STL220N6F7 use?

    The STL220N6F7 uses STripFET F7 technology with an enhanced trench gate structure.

  8. What are some key applications of the STL220N6F7?

    Key applications include communications equipment, computers and peripherals, industrial applications, and BLDC motor drivers.

  9. Can the STL220N6F7 be used in high-current motor control applications?

    Yes, the STL220N6F7 is suitable for high-current motor control applications due to its high drain current and low on-state resistance.

  10. Where can I find additional resources and design tools for the STL220N6F7?

    Additional resources, including EDA symbols, footprints, and 3D models, can be found on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.8W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL220N6F7 STL20N6F7
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V 5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V 1600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 4.8W (Ta), 187W (Tc) 3W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN

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