Overview
The STL20N6F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. These features enable faster and more efficient switching, making the STL20N6F7 highly suitable for various high-performance applications. The MOSFET is packaged in a PowerFLAT™ 3.3x3.3 package, which is designed to meet environmental requirements and is available in different ECOPACK® grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 20 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 12 | A |
| Pulsed Drain Current (IDM) | 400 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 78 | W |
| Total Dissipation at Tpcb = 25 °C (PTOT) | 3 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.0046 (typ.), 0.0054 (max.) | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Input Capacitance (Ciss) | 1600 | pF |
| Output Capacitance (Coss) | 880 | pF |
| Reverse Transfer Capacitance (Crss) | 66 | pF |
| Total Gate Charge (Qg) | 25 | nC |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 0.0046 Ω.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness for enhanced reliability.
- Reduced internal capacitance and gate charge for faster switching times.
Applications
The STL20N6F7 is primarily used in switching applications due to its high efficiency, low on-state resistance, and fast switching times. These characteristics make it suitable for a variety of applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Automotive and industrial power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL20N6F7?
The maximum drain-source voltage (VDS) is 60 V. - What is the typical on-state resistance (RDS(on)) of the STL20N6F7?
The typical on-state resistance (RDS(on)) is 0.0046 Ω. - What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 20 A. - What is the package type of the STL20N6F7?
The STL20N6F7 is packaged in a PowerFLAT™ 3.3x3.3 package. - What are the key features of the STL20N6F7?
The key features include very low RDS(on), excellent FoM, low Crss/Ciss ratio, high avalanche ruggedness, and reduced internal capacitance and gate charge. - What are the typical applications of the STL20N6F7?
The STL20N6F7 is typically used in switching applications, including power supplies, motor control, high-frequency switching circuits, and automotive and industrial power management systems. - What is the maximum gate-source voltage (VGS) of the STL20N6F7?
The maximum gate-source voltage (VGS) is ±20 V. - What is the total gate charge (Qg) of the STL20N6F7?
The total gate charge (Qg) is 25 nC. - What is the thermal resistance junction-pcb (Rthj-pcb) of the STL20N6F7?
The thermal resistance junction-pcb (Rthj-pcb) is 42.8 °C/W. - What is the storage temperature range of the STL20N6F7?
The storage temperature range is -55 to 150 °C.
