STL50N6F7
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STMicroelectronics STL50N6F7

Manufacturer No:
STL50N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL50N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This makes it ideal for fast and efficient switching applications. The MOSFET is packaged in a PowerFLAT™ 5x6 package, which is designed to meet environmental compliance standards through ECOPACK® specifications.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 60 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25 °C) 60 A
ID (Continuous drain current at TC = 100 °C) 43 A
IDM (Pulsed drain current) 240 A
RDS(on) (Static drain-source on-resistance) 9 - 11
Tj (Operating junction temperature) -55 to 175 °C
PTOT (Total dissipation at TC = 25 °C) 71 W
Rthj-pcb (Thermal resistance junction-pcb) 31.3 °C/W
Rthj-case (Thermal resistance junction-case) 2.1 °C/W

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 9 mΩ.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness for robust operation.
  • Enhanced trench gate structure for reduced internal capacitance and gate charge.
  • PowerFLAT™ 5x6 package for optimal thermal performance and space efficiency.

Applications

  • Switching applications, including power supplies, motor drives, and DC-DC converters.
  • High-frequency switching circuits where low on-state resistance and fast switching times are critical.
  • Automotive and industrial power systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL50N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL50N6F7?

    The typical RDS(on) is 9 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 60 A.

  4. What is the operating junction temperature range of the STL50N6F7?

    The operating junction temperature (Tj) range is -55 to 175 °C.

  5. What package type is the STL50N6F7 available in?

    The STL50N6F7 is available in a PowerFLAT™ 5x6 package.

  6. What are the key benefits of the STripFET™ F7 technology used in the STL50N6F7?

    The STripFET™ F7 technology offers low on-state resistance, reduced internal capacitance, and fast switching times, making it ideal for high-efficiency applications.

  7. What is the thermal resistance junction-pcb (Rthj-pcb) of the STL50N6F7?

    The thermal resistance junction-pcb (Rthj-pcb) is 31.3 °C/W.

  8. What are some common applications for the STL50N6F7?

    Common applications include switching power supplies, motor drives, and DC-DC converters, as well as automotive and industrial power systems.

  9. What is the maximum total dissipation at 25 °C for the STL50N6F7?

    The maximum total dissipation (PTOT) at 25 °C is 71 W.

  10. Does the STL50N6F7 have any special environmental compliance?

    Yes, the STL50N6F7 is available in ECOPACK® packages, which meet various environmental compliance standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL50N6F7 STL90N6F7 STL20N6F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 6.5A, 10V 5.4mOhm @ 10.5A, 10V 5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V 1600 pF @ 25 V 1600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 71W (Tc) 4.8W (Ta), 94W (Tc) 3W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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