STL50N6F7
  • Share:

STMicroelectronics STL50N6F7

Manufacturer No:
STL50N6F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL50N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This makes it ideal for fast and efficient switching applications. The MOSFET is packaged in a PowerFLAT™ 5x6 package, which is designed to meet environmental compliance standards through ECOPACK® specifications.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 60 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25 °C) 60 A
ID (Continuous drain current at TC = 100 °C) 43 A
IDM (Pulsed drain current) 240 A
RDS(on) (Static drain-source on-resistance) 9 - 11
Tj (Operating junction temperature) -55 to 175 °C
PTOT (Total dissipation at TC = 25 °C) 71 W
Rthj-pcb (Thermal resistance junction-pcb) 31.3 °C/W
Rthj-case (Thermal resistance junction-case) 2.1 °C/W

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 9 mΩ.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness for robust operation.
  • Enhanced trench gate structure for reduced internal capacitance and gate charge.
  • PowerFLAT™ 5x6 package for optimal thermal performance and space efficiency.

Applications

  • Switching applications, including power supplies, motor drives, and DC-DC converters.
  • High-frequency switching circuits where low on-state resistance and fast switching times are critical.
  • Automotive and industrial power systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL50N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL50N6F7?

    The typical RDS(on) is 9 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 60 A.

  4. What is the operating junction temperature range of the STL50N6F7?

    The operating junction temperature (Tj) range is -55 to 175 °C.

  5. What package type is the STL50N6F7 available in?

    The STL50N6F7 is available in a PowerFLAT™ 5x6 package.

  6. What are the key benefits of the STripFET™ F7 technology used in the STL50N6F7?

    The STripFET™ F7 technology offers low on-state resistance, reduced internal capacitance, and fast switching times, making it ideal for high-efficiency applications.

  7. What is the thermal resistance junction-pcb (Rthj-pcb) of the STL50N6F7?

    The thermal resistance junction-pcb (Rthj-pcb) is 31.3 °C/W.

  8. What are some common applications for the STL50N6F7?

    Common applications include switching power supplies, motor drives, and DC-DC converters, as well as automotive and industrial power systems.

  9. What is the maximum total dissipation at 25 °C for the STL50N6F7?

    The maximum total dissipation (PTOT) at 25 °C is 71 W.

  10. Does the STL50N6F7 have any special environmental compliance?

    Yes, the STL50N6F7 is available in ECOPACK® packages, which meet various environmental compliance standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$1.26
671

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL50N6F7 STL90N6F7 STL20N6F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 6.5A, 10V 5.4mOhm @ 10.5A, 10V 5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V 1600 pF @ 25 V 1600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 71W (Tc) 4.8W (Ta), 94W (Tc) 3W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP