BSN20BKR
  • Share:

Nexperia USA Inc. BSN20BKR

Manufacturer No:
BSN20BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 265MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSN20BKR is a N-channel dual depletion mode MOSFET transistor produced by Nexperia USA Inc. This component is designed to operate within a specific voltage and current range, making it suitable for various electronic applications. The MOSFET is known for its trench technology, which enhances its performance and efficiency.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)0.265 A
Package TypeSOT
Operating Temperature Range-55°C to 150°C

Key Features

  • Trench technology for improved performance and efficiency.
  • Dual depletion mode operation.
  • Low on-resistance.
  • High switching speed.
  • Compact SOT package for space-saving designs.

Applications

The BSN20BKR MOSFET is suitable for a variety of applications, including but not limited to:

  • Power switching and power management systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.

Q & A

  1. What is the maximum voltage rating of the BSN20BKR MOSFET?
    The maximum voltage rating of the BSN20BKR MOSFET is 60 V.
  2. What is the maximum continuous drain current of the BSN20BKR?
    The maximum continuous drain current is 0.265 A.
  3. What type of channel does the BSN20BKR MOSFET have?
    The BSN20BKR MOSFET is an N-channel MOSFET.
  4. What is the package type of the BSN20BKR?
    The package type is SOT.
  5. What is the operating temperature range of the BSN20BKR?
    The operating temperature range is -55°C to 150°C.
  6. What technology is used in the BSN20BKR MOSFET?
    The BSN20BKR uses trench technology.
  7. Is the BSN20BKR suitable for high-speed switching applications?
    Yes, the BSN20BKR is suitable for high-speed switching applications due to its high switching speed.
  8. Can the BSN20BKR be used in automotive electronics?
    Yes, the BSN20BKR can be used in automotive and industrial electronics.
  9. What are some common applications of the BSN20BKR MOSFET?
    Common applications include power switching, DC-DC converters, motor control, and power management systems.
  10. Is the BSN20BKR available in different package types?
    No, the BSN20BKR is specifically available in the SOT package type.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.49 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.2 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.41
1,154

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX84-C6V2/DG/B4R
BZX84-C6V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 6.2V 250MW TO236AB
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR