BSN20BKR
  • Share:

Nexperia USA Inc. BSN20BKR

Manufacturer No:
BSN20BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 265MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSN20BKR is a N-channel dual depletion mode MOSFET transistor produced by Nexperia USA Inc. This component is designed to operate within a specific voltage and current range, making it suitable for various electronic applications. The MOSFET is known for its trench technology, which enhances its performance and efficiency.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)0.265 A
Package TypeSOT
Operating Temperature Range-55°C to 150°C

Key Features

  • Trench technology for improved performance and efficiency.
  • Dual depletion mode operation.
  • Low on-resistance.
  • High switching speed.
  • Compact SOT package for space-saving designs.

Applications

The BSN20BKR MOSFET is suitable for a variety of applications, including but not limited to:

  • Power switching and power management systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.

Q & A

  1. What is the maximum voltage rating of the BSN20BKR MOSFET?
    The maximum voltage rating of the BSN20BKR MOSFET is 60 V.
  2. What is the maximum continuous drain current of the BSN20BKR?
    The maximum continuous drain current is 0.265 A.
  3. What type of channel does the BSN20BKR MOSFET have?
    The BSN20BKR MOSFET is an N-channel MOSFET.
  4. What is the package type of the BSN20BKR?
    The package type is SOT.
  5. What is the operating temperature range of the BSN20BKR?
    The operating temperature range is -55°C to 150°C.
  6. What technology is used in the BSN20BKR MOSFET?
    The BSN20BKR uses trench technology.
  7. Is the BSN20BKR suitable for high-speed switching applications?
    Yes, the BSN20BKR is suitable for high-speed switching applications due to its high switching speed.
  8. Can the BSN20BKR be used in automotive electronics?
    Yes, the BSN20BKR can be used in automotive and industrial electronics.
  9. What are some common applications of the BSN20BKR MOSFET?
    Common applications include power switching, DC-DC converters, motor control, and power management systems.
  10. Is the BSN20BKR available in different package types?
    No, the BSN20BKR is specifically available in the SOT package type.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.49 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.2 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.41
1,154

Please send RFQ , we will respond immediately.

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
BAS16J,135
BAS16J,135
Nexperia USA Inc.
DIODE GP 100V 250MA SOD323F
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74VHC245PW,118
74VHC245PW,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP