FDBL86063-F085
  • Share:

onsemi FDBL86063-F085

Manufacturer No:
FDBL86063-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 240A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86063-F085 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the POWERTRENCH™ family and is designed for high-power applications. It features a drain-to-source voltage (VDSS) of 100 V and a maximum continuous drain current (ID) of 240 A at a junction temperature (TJ) of 25°C. The MOSFET is known for its low on-resistance (RDS(on)) of 2.6 mΩ at VGS = 10 V and ID = 80 A, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 100 V
Gate-to-Source Voltage (VGS) ±20 V
Maximum Continuous Drain Current (ID) 240 A
Maximum Power Dissipation (PD) 357 W
Thermal Resistance, Junction to Case (RθJC) 0.42 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 43 °C/W
Operating and Storage Temperature (TJ, TSTG) -55 to +175 °C
On-Resistance (RDS(on)) 2.6 mΩ @ VGS = 10 V, ID = 80 A
Single Pulse Avalanche Energy (EAS) 160 mJ

Key Features

  • Typical RDS(on) = 2.6 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • Qualified to AEC Q101
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDBL86063-F085?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the typical on-resistance (RDS(on)) of the FDBL86063-F085?

    The typical on-resistance (RDS(on)) is 2.6 mΩ at VGS = 10 V and ID = 80 A.

  3. What are the operating and storage temperature ranges for the FDBL86063-F085?

    The operating and storage temperature ranges are -55°C to +175°C.

  4. Is the FDBL86063-F085 RoHS compliant?
  5. What is the maximum continuous drain current (ID) of the FDBL86063-F085?

    The maximum continuous drain current (ID) is 240 A at TJ = 25°C.

  6. What is the single pulse avalanche energy (EAS) of the FDBL86063-F085?

    The single pulse avalanche energy (EAS) is 160 mJ.

  7. What are some common applications of the FDBL86063-F085?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical steering, and primary switches for 12 V systems.

  8. What is the thermal resistance, junction to case (RθJC), of the FDBL86063-F085?

    The thermal resistance, junction to case (RθJC), is 0.42 °C/W.

  9. Is the FDBL86063-F085 qualified to any automotive standards?
  10. What is the maximum power dissipation (PD) of the FDBL86063-F085?

    The maximum power dissipation (PD) is 357 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):357W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$7.04
140

Please send RFQ , we will respond immediately.

Same Series
FDBL86063_F085
FDBL86063_F085
MOSFET N-CH 100V 240A 8HPSOF

Similar Products

Part Number FDBL86063-F085 FDBL86066-F085 FDBL86363-F085 FDBL86563-F085 FDBL86063_F085 FDBL86062-F085
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 80 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc) 185A (Tc) 240A (Tc) 240A (Tc) 240A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 80A, 10V 4.1mOhm @ 80A, 10V 2mOhm @ 80A, 10V 1.5mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 69 nC @ 10 V 169 nC @ 10 V 169 nC @ 10 V 95 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 50 V 3240 pF @ 50 V 10000 pF @ 40 V 10300 pF @ 30 V 5120 pF @ 50 V 6970 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 357W (Tj) 300W (Ta) 357W (Tj) 357W (Tj) 357W (Tj) 429W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN