FDBL86063-F085
  • Share:

onsemi FDBL86063-F085

Manufacturer No:
FDBL86063-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 240A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86063-F085 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the POWERTRENCH™ family and is designed for high-power applications. It features a drain-to-source voltage (VDSS) of 100 V and a maximum continuous drain current (ID) of 240 A at a junction temperature (TJ) of 25°C. The MOSFET is known for its low on-resistance (RDS(on)) of 2.6 mΩ at VGS = 10 V and ID = 80 A, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 100 V
Gate-to-Source Voltage (VGS) ±20 V
Maximum Continuous Drain Current (ID) 240 A
Maximum Power Dissipation (PD) 357 W
Thermal Resistance, Junction to Case (RθJC) 0.42 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 43 °C/W
Operating and Storage Temperature (TJ, TSTG) -55 to +175 °C
On-Resistance (RDS(on)) 2.6 mΩ @ VGS = 10 V, ID = 80 A
Single Pulse Avalanche Energy (EAS) 160 mJ

Key Features

  • Typical RDS(on) = 2.6 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • Qualified to AEC Q101
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDBL86063-F085?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the typical on-resistance (RDS(on)) of the FDBL86063-F085?

    The typical on-resistance (RDS(on)) is 2.6 mΩ at VGS = 10 V and ID = 80 A.

  3. What are the operating and storage temperature ranges for the FDBL86063-F085?

    The operating and storage temperature ranges are -55°C to +175°C.

  4. Is the FDBL86063-F085 RoHS compliant?
  5. What is the maximum continuous drain current (ID) of the FDBL86063-F085?

    The maximum continuous drain current (ID) is 240 A at TJ = 25°C.

  6. What is the single pulse avalanche energy (EAS) of the FDBL86063-F085?

    The single pulse avalanche energy (EAS) is 160 mJ.

  7. What are some common applications of the FDBL86063-F085?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical steering, and primary switches for 12 V systems.

  8. What is the thermal resistance, junction to case (RθJC), of the FDBL86063-F085?

    The thermal resistance, junction to case (RθJC), is 0.42 °C/W.

  9. Is the FDBL86063-F085 qualified to any automotive standards?
  10. What is the maximum power dissipation (PD) of the FDBL86063-F085?

    The maximum power dissipation (PD) is 357 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):357W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$7.04
140

Please send RFQ , we will respond immediately.

Same Series
FDBL86063_F085
FDBL86063_F085
MOSFET N-CH 100V 240A 8HPSOF

Similar Products

Part Number FDBL86063-F085 FDBL86066-F085 FDBL86363-F085 FDBL86563-F085 FDBL86063_F085 FDBL86062-F085
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 80 V 60 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc) 185A (Tc) 240A (Tc) 240A (Tc) 240A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 80A, 10V 4.1mOhm @ 80A, 10V 2mOhm @ 80A, 10V 1.5mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 69 nC @ 10 V 169 nC @ 10 V 169 nC @ 10 V 95 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 50 V 3240 pF @ 50 V 10000 pF @ 40 V 10300 pF @ 30 V 5120 pF @ 50 V 6970 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 357W (Tj) 300W (Ta) 357W (Tj) 357W (Tj) 357W (Tj) 429W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223