FDBL86066-F085
  • Share:

onsemi FDBL86066-F085

Manufacturer No:
FDBL86066-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 185A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86066-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications in the automotive and industrial sectors. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power density and efficiency. The FDBL86066-F085 offers a drain-to-source voltage (VDSS) of 100 V and a continuous drain current (ID) of up to 240 A, making it suitable for high-power applications.

Key Specifications

Parameter Min Typ Max Unit
VDSS (Drain-to-Source Breakdown Voltage) - - 100 V
VGS (Gate-to-Source Voltage) - - ±20 V
ID (Continuous Drain Current) - - 240 A
RDS(on) (Static Drain to Source On Resistance) - 3.3 4.1
Qg(tot) (Total Gate Charge) - 47 69 nC
RθJC (Thermal Resistance, Junction to Case) - - 0.5 °C/W
RθJA (Thermal Resistance, Junction to Ambient) - - 43 °C/W

Key Features

  • Typical RDS(on) of 3.3 mΩ at VGS = 10 V, ID = 80 A, ensuring low on-state resistance.
  • Typical Qg(tot) of 47 nC at VGS = 10 V, ID = 80 A, which is beneficial for high-frequency switching applications.
  • UIS (Unclamped Inductive Switching) capability, enhancing reliability in inductive load switching.
  • Qualified to AEC Q101, ensuring compliance with automotive standards.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it environmentally friendly.

Applications

  • Automotive Engine Control: Suitable for engine management systems due to its high reliability and performance.
  • PowerTrain Management: Ideal for powertrain control modules requiring high current handling.
  • Solenoid and Motor Drivers: Used in driving solenoids and motors in various automotive and industrial applications.
  • Electrical Power Steering: Enhances the efficiency and reliability of power steering systems.
  • Integrated Starter/Alternator: Suitable for advanced starter/alternator systems in vehicles.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDBL86066-F085?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDBL86066-F085?

    The typical on-state resistance (RDS(on)) is 3.3 mΩ at VGS = 10 V, ID = 80 A.

  3. What is the total gate charge (Qg(tot)) of the FDBL86066-F085?

    The typical total gate charge (Qg(tot)) is 47 nC at VGS = 10 V, ID = 80 A.

  4. Is the FDBL86066-F085 qualified to any automotive standards?

    Yes, it is qualified to AEC Q101.

  5. What are the thermal resistance values for the FDBL86066-F085?

    The thermal resistance from junction to case (RθJC) is 0.5 °C/W, and from junction to ambient (RθJA) is 43 °C/W.

  6. What are the typical applications of the FDBL86066-F085?

    It is typically used in automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, and integrated starter/alternator systems.

  7. Is the FDBL86066-F085 environmentally friendly?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  8. What is the maximum continuous drain current (ID) of the FDBL86066-F085?

    The maximum continuous drain current (ID) is 240 A.

  9. What is the UIS capability of the FDBL86066-F085?

    The device has UIS (Unclamped Inductive Switching) capability, which enhances its reliability in inductive load switching.

  10. How is the FDBL86066-F085 packaged?

    The device is packaged in an H-PSOF8L case and is available in tape and reel format with 2000 units per reel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:185A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):300W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$3.59
223

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDBL86066-F085 FDBL86566-F085 FDBL86366-F085 FDBL86062-F085 FDBL86063-F085
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 80 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 185A (Tc) 240A (Tc) 220A (Tc) 300A (Tc) 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V 2.4mOhm @ 80A, 10V 3mOhm @ 80A, 10V 2mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 110 nC @ 10 V 112 nC @ 10 V 124 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 50 V 6655 pF @ 30 V 6320 pF @ 40 V 6970 pF @ 50 V 5120 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 300W (Ta) 300W (Tj) 300W (Tj) 429W (Tc) 357W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE