FDBL86062-F085
  • Share:

onsemi FDBL86062-F085

Manufacturer No:
FDBL86062-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86062-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications in the automotive and industrial sectors. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power handling and efficiency. With a drain-to-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 300 A, this MOSFET is well-suited for applications requiring high power and reliability.

Key Specifications

Parameter Min. Typ. Max. Units
VDSS (Drain-to-Source Voltage) - - 100 V
VGS (Gate-to-Source Voltage) - - ±20 V
ID (Continuous Drain Current) - - 300 A
RDS(on) (Drain-to-Source On Resistance) - 1.5 2.0
Qg(tot) (Total Gate Charge) - 95 124 nC
PD (Power Dissipation) - - 429 W
RθJC (Thermal Resistance, Junction to Case) - - 0.35 °C/W
RθJA (Maximum Thermal Resistance, Junction to Ambient) - - 43 °C/W
TJ, TSTG (Operating and Storage Temperature) -55 - 175 °C

Key Features

  • High Current Capability: Continuous drain current of 300 A and pulsed drain current as specified.
  • Low On-Resistance: Typical RDS(on) of 1.5 mΩ at VGS = 10 V, ID = 80 A.
  • UIS Capability: Unclamped Inductive Switching capability enhances reliability in high-stress applications.
  • AEC Q101 Qualified: Meets the stringent requirements of the Automotive Electronics Council Q101 standard.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • Advanced Trench Technology: Part of the POWERTRENCH family, offering improved power handling and efficiency.

Applications

  • Automotive Engine Control: Suitable for engine management systems and other high-power automotive applications.
  • PowerTrain Management: Used in powertrain control modules and other power management systems.
  • Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive and industrial applications.
  • Integrated Starter/Alternator: Can be used in integrated starter/alternator systems for improved efficiency and reliability.
  • Primary Switch for 12 V Systems: Suitable as a primary switch in 12 V automotive electrical systems.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDBL86062-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 300 A.

  3. What is the typical on-resistance (RDS(on)) of the FDBL86062-F085?

    The typical on-resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V, ID = 80 A.

  4. Is the FDBL86062-F085 qualified to any automotive standards?

    Yes, it is qualified to the AEC Q101 standard.

  5. What are the operating and storage temperature ranges for this MOSFET?

    The operating and storage temperature ranges are from -55°C to +175°C.

  6. What is the thermal resistance from junction to case (RθJC) for this device?

    The thermal resistance from junction to case (RθJC) is 0.35 °C/W.

  7. What are some common applications for the FDBL86062-F085 MOSFET?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.

  8. Is the FDBL86062-F085 Pb-Free and RoHS compliant?

    Yes, it is Pb-Free and RoHS compliant.

  9. What is the typical total gate charge (Qg(tot)) for this MOSFET?

    The typical total gate charge (Qg(tot)) is 95 nC at VGS = 10 V, ID = 80 A.

  10. What is the maximum power dissipation (PD) for the FDBL86062-F085?

    The maximum power dissipation (PD) is 429 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6970 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$6.82
13

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDBL86062-F085 FDBL86063-F085 FDBL86066-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 240A (Tc) 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V 4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 95 nC @ 10 V 69 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6970 pF @ 50 V 5120 pF @ 50 V 3240 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 429W (Tc) 357W (Tj) 300W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5