FDBL86062-F085
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onsemi FDBL86062-F085

Manufacturer No:
FDBL86062-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 300A 8HPSOF
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDBL86062-F085 is a high-performance N-Channel MOSFET from onsemi, designed for demanding applications in the automotive and industrial sectors. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power handling and efficiency. With a drain-to-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 300 A, this MOSFET is well-suited for applications requiring high power and reliability.

Key Specifications

Parameter Min. Typ. Max. Units
VDSS (Drain-to-Source Voltage) - - 100 V
VGS (Gate-to-Source Voltage) - - ±20 V
ID (Continuous Drain Current) - - 300 A
RDS(on) (Drain-to-Source On Resistance) - 1.5 2.0
Qg(tot) (Total Gate Charge) - 95 124 nC
PD (Power Dissipation) - - 429 W
RθJC (Thermal Resistance, Junction to Case) - - 0.35 °C/W
RθJA (Maximum Thermal Resistance, Junction to Ambient) - - 43 °C/W
TJ, TSTG (Operating and Storage Temperature) -55 - 175 °C

Key Features

  • High Current Capability: Continuous drain current of 300 A and pulsed drain current as specified.
  • Low On-Resistance: Typical RDS(on) of 1.5 mΩ at VGS = 10 V, ID = 80 A.
  • UIS Capability: Unclamped Inductive Switching capability enhances reliability in high-stress applications.
  • AEC Q101 Qualified: Meets the stringent requirements of the Automotive Electronics Council Q101 standard.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • Advanced Trench Technology: Part of the POWERTRENCH family, offering improved power handling and efficiency.

Applications

  • Automotive Engine Control: Suitable for engine management systems and other high-power automotive applications.
  • PowerTrain Management: Used in powertrain control modules and other power management systems.
  • Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive and industrial applications.
  • Integrated Starter/Alternator: Can be used in integrated starter/alternator systems for improved efficiency and reliability.
  • Primary Switch for 12 V Systems: Suitable as a primary switch in 12 V automotive electrical systems.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDBL86062-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 300 A.

  3. What is the typical on-resistance (RDS(on)) of the FDBL86062-F085?

    The typical on-resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V, ID = 80 A.

  4. Is the FDBL86062-F085 qualified to any automotive standards?

    Yes, it is qualified to the AEC Q101 standard.

  5. What are the operating and storage temperature ranges for this MOSFET?

    The operating and storage temperature ranges are from -55°C to +175°C.

  6. What is the thermal resistance from junction to case (RθJC) for this device?

    The thermal resistance from junction to case (RθJC) is 0.35 °C/W.

  7. What are some common applications for the FDBL86062-F085 MOSFET?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.

  8. Is the FDBL86062-F085 Pb-Free and RoHS compliant?

    Yes, it is Pb-Free and RoHS compliant.

  9. What is the typical total gate charge (Qg(tot)) for this MOSFET?

    The typical total gate charge (Qg(tot)) is 95 nC at VGS = 10 V, ID = 80 A.

  10. What is the maximum power dissipation (PD) for the FDBL86062-F085?

    The maximum power dissipation (PD) is 429 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6970 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL86062-F085 FDBL86063-F085 FDBL86066-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 240A (Tc) 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V 4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 95 nC @ 10 V 69 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6970 pF @ 50 V 5120 pF @ 50 V 3240 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 429W (Tc) 357W (Tj) 300W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

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