Overview
The FDN357N is a SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistor produced by onsemi. It utilizes onsemi's proprietary, high cell density, DMOS technology, which is tailored to minimize on-state resistance. This device is particularly suited for low voltage applications in battery-powered circuits where fast switching and low in-line power loss are critical.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 30 | V |
| Gate-Source Voltage - Continuous (VGSS) | ±20 | V |
| Drain/Output Current - Continuous (ID) | 1.9 | A |
| Drain/Output Current - Pulsed (ID) | 10 | A |
| Maximum Power Dissipation (PD) | 0.5 (Note 1a), 0.46 (Note 1b) | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 250 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 75 | °C/W |
| Drain-Source On-Resistance (RDS(ON)) @ VGS = 4.5 V | 0.09 Ω | Ω |
| Drain-Source On-Resistance (RDS(ON)) @ VGS = 10 V | 0.06 Ω | Ω |
Key Features
- 1.9 A, 30 V, with RDS(ON) = 0.09 Ω @ VGS = 4.5 V and RDS(ON) = 0.06 Ω @ VGS = 10 V.
- Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
- Pb-Free and RoHS compliant.
Applications
- Notebook computers
- Portable phones
- PCMCIA cards
- Battery-powered circuits
- Low voltage applications where fast switching and low in-line power loss are necessary.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDN357N? The maximum drain-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) rating of the FDN357N? The continuous drain current (ID) rating is 1.9 A.
- What is the maximum power dissipation (PD) of the FDN357N? The maximum power dissipation (PD) is 0.5 W (Note 1a) and 0.46 W (Note 1b).
- What is the thermal resistance, junction-to-ambient (RθJA), of the FDN357N? The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.
- Is the FDN357N Pb-Free and RoHS compliant? Yes, the FDN357N is Pb-Free and RoHS compliant.
- What package type does the FDN357N use? The FDN357N uses an industry standard SOT-23 surface mount package with the proprietary SuperSOT™-3 design.
- What are the typical applications of the FDN357N? Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
- What is the gate-source voltage (VGS) required for the specified RDS(ON) values? The RDS(ON) values are specified at VGS = 4.5 V and VGS = 10 V.
- What is the maximum operating junction temperature of the FDN357N? The maximum operating junction temperature is 150 °C.
- How many devices are typically shipped per reel? The devices are typically shipped in quantities of 3000 per reel.
