FDN327N
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onsemi FDN327N

Manufacturer No:
FDN327N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 2A SUPERSOT3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDN327N is a 20 V N-Channel MOSFET produced by onsemi, utilizing their high voltage PowerTrench process. This device is optimized for power management applications and features high performance trench technology for extremely low on-resistance (RDS(on)). It is available in the SuperSOT-3 package, making it suitable for surface mount applications.

Key Specifications

Parameter Rating Unit
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±8 V
Continuous Drain Current (ID) 2 A
Pulsed Drain Current 8 A
Power Dissipation (PD) 0.5 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W
On-Resistance (RDS(on)) @ VGS = 4.5 V 70 mΩ
On-Resistance (RDS(on)) @ VGS = 2.5 V 80 mΩ
On-Resistance (RDS(on)) @ VGS = 1.8 V 120 mΩ
Gate Threshold Voltage (VGS(th)) 0.4 to 1.5 V
Gate Charge (Qg) 4.5 nC (typical) nC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge (4.5 nC typical)
  • Fast switching speed
  • Pb-free and halogen-free
  • Available in SuperSOT-3 package for surface mount applications

Applications

  • Load switch
  • Battery protection
  • Power management

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDN327N MOSFET?

    The maximum drain-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current (ID) rating of the FDN327N?

    The continuous drain current (ID) rating is 2 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN327N?

    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.

  4. What are the typical on-resistance values for the FDN327N at different gate-source voltages?

    The on-resistance (RDS(on)) is 70 mΩ at VGS = 4.5 V, 80 mΩ at VGS = 2.5 V, and 120 mΩ at VGS = 1.8 V.

  5. What is the gate threshold voltage (VGS(th)) range for the FDN327N?

    The gate threshold voltage (VGS(th)) range is from 0.4 V to 1.5 V.

  6. Is the FDN327N Pb-free and halogen-free?
  7. In what package is the FDN327N available?

    The FDN327N is available in the SuperSOT-3 package.

  8. What are some common applications for the FDN327N MOSFET?

    Common applications include load switch, battery protection, and power management.

  9. What is the typical gate charge (Qg) for the FDN327N?

    The typical gate charge (Qg) is 4.5 nC.

  10. What is the operating and storage junction temperature range for the FDN327N?

    The operating and storage junction temperature range is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:423 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN327N FDN337N FDN357N
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2.2A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 4.5V 65mOhm @ 2.2A, 4.5V 60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V 9 nC @ 4.5 V 5.9 nC @ 5 V
Vgs (Max) ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 10 V 300 pF @ 10 V 235 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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