FDN327N
  • Share:

onsemi FDN327N

Manufacturer No:
FDN327N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 2A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN327N is a 20 V N-Channel MOSFET produced by onsemi, utilizing their high voltage PowerTrench process. This device is optimized for power management applications and features high performance trench technology for extremely low on-resistance (RDS(on)). It is available in the SuperSOT-3 package, making it suitable for surface mount applications.

Key Specifications

Parameter Rating Unit
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±8 V
Continuous Drain Current (ID) 2 A
Pulsed Drain Current 8 A
Power Dissipation (PD) 0.5 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W
On-Resistance (RDS(on)) @ VGS = 4.5 V 70 mΩ
On-Resistance (RDS(on)) @ VGS = 2.5 V 80 mΩ
On-Resistance (RDS(on)) @ VGS = 1.8 V 120 mΩ
Gate Threshold Voltage (VGS(th)) 0.4 to 1.5 V
Gate Charge (Qg) 4.5 nC (typical) nC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge (4.5 nC typical)
  • Fast switching speed
  • Pb-free and halogen-free
  • Available in SuperSOT-3 package for surface mount applications

Applications

  • Load switch
  • Battery protection
  • Power management

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDN327N MOSFET?

    The maximum drain-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current (ID) rating of the FDN327N?

    The continuous drain current (ID) rating is 2 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN327N?

    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.

  4. What are the typical on-resistance values for the FDN327N at different gate-source voltages?

    The on-resistance (RDS(on)) is 70 mΩ at VGS = 4.5 V, 80 mΩ at VGS = 2.5 V, and 120 mΩ at VGS = 1.8 V.

  5. What is the gate threshold voltage (VGS(th)) range for the FDN327N?

    The gate threshold voltage (VGS(th)) range is from 0.4 V to 1.5 V.

  6. Is the FDN327N Pb-free and halogen-free?
  7. In what package is the FDN327N available?

    The FDN327N is available in the SuperSOT-3 package.

  8. What are some common applications for the FDN327N MOSFET?

    Common applications include load switch, battery protection, and power management.

  9. What is the typical gate charge (Qg) for the FDN327N?

    The typical gate charge (Qg) is 4.5 nC.

  10. What is the operating and storage junction temperature range for the FDN327N?

    The operating and storage junction temperature range is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:423 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
1,501

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDN327N FDN337N FDN357N
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2.2A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 4.5V 65mOhm @ 2.2A, 4.5V 60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V 9 nC @ 4.5 V 5.9 nC @ 5 V
Vgs (Max) ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 10 V 300 pF @ 10 V 235 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223