FDN327N
  • Share:

onsemi FDN327N

Manufacturer No:
FDN327N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 2A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN327N is a 20 V N-Channel MOSFET produced by onsemi, utilizing their high voltage PowerTrench process. This device is optimized for power management applications and features high performance trench technology for extremely low on-resistance (RDS(on)). It is available in the SuperSOT-3 package, making it suitable for surface mount applications.

Key Specifications

Parameter Rating Unit
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±8 V
Continuous Drain Current (ID) 2 A
Pulsed Drain Current 8 A
Power Dissipation (PD) 0.5 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W
On-Resistance (RDS(on)) @ VGS = 4.5 V 70 mΩ
On-Resistance (RDS(on)) @ VGS = 2.5 V 80 mΩ
On-Resistance (RDS(on)) @ VGS = 1.8 V 120 mΩ
Gate Threshold Voltage (VGS(th)) 0.4 to 1.5 V
Gate Charge (Qg) 4.5 nC (typical) nC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge (4.5 nC typical)
  • Fast switching speed
  • Pb-free and halogen-free
  • Available in SuperSOT-3 package for surface mount applications

Applications

  • Load switch
  • Battery protection
  • Power management

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDN327N MOSFET?

    The maximum drain-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current (ID) rating of the FDN327N?

    The continuous drain current (ID) rating is 2 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN327N?

    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.

  4. What are the typical on-resistance values for the FDN327N at different gate-source voltages?

    The on-resistance (RDS(on)) is 70 mΩ at VGS = 4.5 V, 80 mΩ at VGS = 2.5 V, and 120 mΩ at VGS = 1.8 V.

  5. What is the gate threshold voltage (VGS(th)) range for the FDN327N?

    The gate threshold voltage (VGS(th)) range is from 0.4 V to 1.5 V.

  6. Is the FDN327N Pb-free and halogen-free?
  7. In what package is the FDN327N available?

    The FDN327N is available in the SuperSOT-3 package.

  8. What are some common applications for the FDN327N MOSFET?

    Common applications include load switch, battery protection, and power management.

  9. What is the typical gate charge (Qg) for the FDN327N?

    The typical gate charge (Qg) is 4.5 nC.

  10. What is the operating and storage junction temperature range for the FDN327N?

    The operating and storage junction temperature range is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:423 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
1,501

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDN327N FDN337N FDN357N
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2.2A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 4.5V 65mOhm @ 2.2A, 4.5V 60mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 4.5 V 9 nC @ 4.5 V 5.9 nC @ 5 V
Vgs (Max) ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 10 V 300 pF @ 10 V 235 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT