PSMN3R0-60PS,127
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Nexperia USA Inc. PSMN3R0-60PS,127

Manufacturer No:
PSMN3R0-60PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 60V 100A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The PSMN3R0-60PS,127 is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by Nexperia USA Inc. This component is known for its high efficiency, characterized by low switching and conduction losses. Although it is currently obsolete and no longer manufactured, it remains a significant component in the realm of power electronics due to its performance characteristics.

Key Specifications

ParameterValue
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A
Rds On (Max) @ Id, Vgs3.0mΩ @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9900 pF @ 50 V
Package / CaseTO-220AB
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole

Key Features

  • High efficiency due to low switching and conduction losses.
  • N-channel enhancement mode MOSFET.
  • High current capability of up to 100A.
  • Low on-resistance (Rds On) of 3.0mΩ at 25A and 10V Vgs.
  • Wide operating temperature range.
  • Through-hole mounting in TO-220AB package.

Applications

The PSMN3R0-60PS,127 MOSFET is suitable for various power electronics applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and amplification circuits.
  • High-power audio amplifiers.
  • Industrial and automotive systems requiring high current and low loss switching.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN3R0-60PS,127?
    The maximum drain to source voltage (Vdss) is 60V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 100A.
  3. What is the maximum on-resistance (Rds On) at 25A and 10V Vgs?
    The maximum on-resistance (Rds On) at 25A and 10V Vgs is 3.0mΩ.
  4. What is the gate charge (Qg) at 10V Vgs?
    The gate charge (Qg) at 10V Vgs is 170 nC.
  5. What is the input capacitance (Ciss) at 50V Vds?
    The input capacitance (Ciss) at 50V Vds is 9900 pF.
  6. What is the package type of the PSMN3R0-60PS,127?
    The package type is TO-220AB.
  7. Is the PSMN3R0-60PS,127 still in production?
    No, the PSMN3R0-60PS,127 is obsolete and no longer manufactured.
  8. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, switching and amplification circuits, high-power audio amplifiers, and industrial and automotive systems.
  9. What is the maximum gate-source voltage (Vgs) for this MOSFET?
    The maximum gate-source voltage (Vgs) is ±20V.
  10. What is the technology used in this MOSFET?
    The technology used is MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8079 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN3R0-60PS,127 PSMN2R0-60PS,127 PSMN3R0-60ES,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V 2.2mOhm @ 25A, 10V 3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 137 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8079 pF @ 30 V 9997 pF @ 30 V 8079 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 306W (Tc) 338W (Tc) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB I2PAK
Package / Case TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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