STF18NM60N
  • Share:

STMicroelectronics STF18NM60N

Manufacturer No:
STF18NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF18NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed for high-efficiency converters and other demanding switching applications. It features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. The STF18NM60N is packaged in a TO-220FP flange mount, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Drain Current (ID) Continuous at TC = 25 °C 13 A
Drain Current (ID) Continuous at TC = 100 °C 8.2 A
Pulsed Drain Current (IDM) 52 A
Total Dissipation at TC = 25 °C 30 W
Static Drain-Source On Resistance (RDS(on)) 0.285 Ω Ω
Gate Threshold Voltage (VGS(th)) 2-4 V
Avalanche Energy Rating (EAS) 350 mJ mJ
Operating Temperature Max 150 °C
Package Type TO-220FP

Key Features

  • 100% avalanche tested for reliability
  • Low input capacitance and gate charge, enhancing switching efficiency
  • Low gate input resistance for better control
  • MDmesh™ II technology for low on-resistance and high efficiency
  • Vertical structure combined with strip layout for optimal performance
  • Isolated case connection for improved thermal management
  • RoHS compliant and available in ECOPACK® packages for environmental compliance

Applications

  • Switching applications, including power supplies, DC-DC converters, and motor drives
  • High-efficiency converters requiring low on-resistance and high switching speeds
  • Power management systems in industrial, automotive, and consumer electronics

Q & A

  1. What is the maximum drain-source voltage of the STF18NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STF18NM60N?

    The typical on-resistance (RDS(on)) is 0.285 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the package type of the STF18NM60N?

    The package type is TO-220FP.

  5. Is the STF18NM60N RoHS compliant?

    Yes, the STF18NM60N is RoHS compliant.

  6. What technology is used in the STF18NM60N?

    The STF18NM60N uses the second generation of MDmesh™ technology.

  7. What are the typical applications of the STF18NM60N?

    The STF18NM60N is typically used in switching applications, high-efficiency converters, and power management systems.

  8. What is the maximum operating temperature of the STF18NM60N?

    The maximum operating temperature is 150 °C.

  9. What is the avalanche energy rating of the STF18NM60N?

    The avalanche energy rating (EAS) is 350 mJ.

  10. Is the STF18NM60N available in environmentally compliant packages?

    Yes, it is available in ECOPACK® packages for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.97
43

Please send RFQ , we will respond immediately.

Same Series
STP18NM60N
STP18NM60N
MOSFET N-CH 600V 13A TO220AB
STF18NM60N
STF18NM60N
MOSFET N-CH 600V 13A TO220FP
STB18NM60N
STB18NM60N
MOSFET N-CH 600V 13A D2PAK

Similar Products

Part Number STF18NM60N STF18NM60ND STF10NM60N STF11NM60N STF12NM60N STF13NM60N STF15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK