STF18NM60N
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STMicroelectronics STF18NM60N

Manufacturer No:
STF18NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STF18NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed for high-efficiency converters and other demanding switching applications. It features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. The STF18NM60N is packaged in a TO-220FP flange mount, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Drain Current (ID) Continuous at TC = 25 °C 13 A
Drain Current (ID) Continuous at TC = 100 °C 8.2 A
Pulsed Drain Current (IDM) 52 A
Total Dissipation at TC = 25 °C 30 W
Static Drain-Source On Resistance (RDS(on)) 0.285 Ω Ω
Gate Threshold Voltage (VGS(th)) 2-4 V
Avalanche Energy Rating (EAS) 350 mJ mJ
Operating Temperature Max 150 °C
Package Type TO-220FP

Key Features

  • 100% avalanche tested for reliability
  • Low input capacitance and gate charge, enhancing switching efficiency
  • Low gate input resistance for better control
  • MDmesh™ II technology for low on-resistance and high efficiency
  • Vertical structure combined with strip layout for optimal performance
  • Isolated case connection for improved thermal management
  • RoHS compliant and available in ECOPACK® packages for environmental compliance

Applications

  • Switching applications, including power supplies, DC-DC converters, and motor drives
  • High-efficiency converters requiring low on-resistance and high switching speeds
  • Power management systems in industrial, automotive, and consumer electronics

Q & A

  1. What is the maximum drain-source voltage of the STF18NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STF18NM60N?

    The typical on-resistance (RDS(on)) is 0.285 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  4. What is the package type of the STF18NM60N?

    The package type is TO-220FP.

  5. Is the STF18NM60N RoHS compliant?

    Yes, the STF18NM60N is RoHS compliant.

  6. What technology is used in the STF18NM60N?

    The STF18NM60N uses the second generation of MDmesh™ technology.

  7. What are the typical applications of the STF18NM60N?

    The STF18NM60N is typically used in switching applications, high-efficiency converters, and power management systems.

  8. What is the maximum operating temperature of the STF18NM60N?

    The maximum operating temperature is 150 °C.

  9. What is the avalanche energy rating of the STF18NM60N?

    The avalanche energy rating (EAS) is 350 mJ.

  10. Is the STF18NM60N available in environmentally compliant packages?

    Yes, it is available in ECOPACK® packages for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF18NM60N STF18NM60ND STF10NM60N STF11NM60N STF12NM60N STF13NM60N STF15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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