Overview
The STF13NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| VGS (Gate-Source Voltage) | ±25 | V |
| ID (Drain Current, continuous) at TC = 25 °C | 11 | A |
| ID (Drain Current, continuous) at TC = 100 °C | 6.9 | A |
| IDM (Drain Current, pulsed) | 44 | A |
| PTOT (Total Power Dissipation) at TC = 25 °C | 25 | W |
| RDS(on) (Drain-Source On-State Resistance) | 0.28 (typ.) | Ω |
| TJ (Operating Junction Temperature) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 5 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 62.5 | °C/W |
| Package | TO-220FP |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Vertical structure combined with strip layout for low on-resistance and gate charge
- Suitable for high-efficiency converters
Applications
The STF13NM60N is primarily used in switching applications, particularly in high-efficiency converters. Its low on-resistance and gate charge make it ideal for applications requiring high efficiency and reliability, such as in power supplies, motor control, and other power conversion systems.
Q & A
- What is the maximum drain-source voltage of the STF13NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 11 A.
- What is the typical on-resistance of the STF13NM60N?
The typical on-resistance (RDS(on)) is 0.28 Ω.
- What is the maximum junction temperature?
The maximum junction temperature (TJ) is 150 °C.
- What package type is the STF13NM60N available in?
The STF13NM60N is available in the TO-220FP package.
- What are the key features of the STF13NM60N?
The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
- What applications is the STF13NM60N suitable for?
The STF13NM60N is suitable for switching applications, particularly in high-efficiency converters.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RthJC) is 5 °C/W.
- What is the thermal resistance from junction to ambient?
The thermal resistance from junction to ambient (RthJA) is 62.5 °C/W.
- What technology is used in the STF13NM60N?
The STF13NM60N uses the second generation of MDmesh technology.
