STP13NM60N
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STMicroelectronics STP13NM60N

Manufacturer No:
STP13NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The STP13NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for high-efficiency converters and demanding switching applications. The STP13NM60N combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values, enhancing its performance in various power management systems.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
On-Resistance (RDS(on))280 mΩ (typ.) / 360 mΩ (max.)
Drain Current (ID)11A
Total Gate Charge (Qg)135 nCnC
Gate-Source Charge (Qgs)27 nCnC
Gate-Drain Charge (Qgd)14 nCnC
Turn-on Delay Time (td(on))3 nsns
Rise Time (tr)8 nsns
Turn-off Delay Time (td(off))30 nsns
Fall Time (tf)10 nsns
PackageTO-220

Key Features

  • Low on-resistance (RDS(on)) of 280 mΩ (typ.) and 360 mΩ (max.)
  • Low gate charge and input capacitance
  • 100% avalanche tested
  • Low gate input resistance
  • Available in ECOPACK packages for environmental compliance

Applications

The STP13NM60N is designed for high-efficiency switching applications, including but not limited to:

  • Power converters and inverters
  • Motor control and drive systems
  • Power supplies and DC-DC converters
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STP13NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STP13NM60N?
    The typical on-resistance (RDS(on)) is 280 mΩ.
  3. What is the maximum drain current of the STP13NM60N?
    The maximum drain current (ID) is 11 A.
  4. What technology is used in the STP13NM60N?
    The STP13NM60N is developed using the second generation of MDmesh technology.
  5. What are the key features of the STP13NM60N?
    The key features include low on-resistance, low gate charge, low input capacitance, and 100% avalanche testing.
  6. In which package is the STP13NM60N available?
    The STP13NM60N is available in the TO-220 package.
  7. What are the typical switching times for the STP13NM60N?
    The typical turn-on delay time is 3 ns, rise time is 8 ns, turn-off delay time is 30 ns, and fall time is 10 ns.
  8. Is the STP13NM60N environmentally compliant?
    Yes, it is available in ECOPACK packages for environmental compliance.
  9. What are some common applications of the STP13NM60N?
    Common applications include power converters, motor control systems, power supplies, and high-frequency switching circuits.
  10. Where can I find detailed specifications and datasheets for the STP13NM60N?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website and through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP13NM60N STP13NM60ND STP18NM60N STP15NM60N STP10NM60N STP11NM60N STP12NM60N STP13NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc) 13A (Tc) 14A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V 285mOhm @ 6.5A, 10V 299mOhm @ 7A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 410mOhm @ 5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 24.5 nC @ 10 V 35 nC @ 10 V 37 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V 845 pF @ 50 V 1000 pF @ 50 V 1250 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 960 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 90W (Tc) 109W (Tc) 110W (Tc) 125W (Tc) 70W (Tc) 90W (Tc) 90W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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