Overview
The STP11NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh™ Technology. This revolutionary technology combines a new vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes the STP11NM60N highly suitable for the most demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) at TC = 25°C | 10 | A |
| Drain Current (ID) at TC = 100°C | 6.3 | A |
| Drain Current (pulsed) (IDM) | 40 | A |
| On-Resistance (RDS(on)) | < 0.45 Ω | Ω |
| Total Dissipation at TC = 25°C (PTOT) | 100 | W |
| Thermal Resistance Junction-Case (Rthj-case) | 1.25 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High efficiency due to low on-resistance and gate charge
- Suitable for high-efficiency converters
Applications
The STP11NM60N is primarily used in switching applications, particularly in high-efficiency converters where low on-resistance and gate charge are critical.
Q & A
- What is the maximum drain-source voltage of the STP11NM60N?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance (RDS(on)) of the STP11NM60N?
The typical on-resistance is less than 0.45 Ω. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 10 A. - What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case is 1.25 °C/W. - Is the STP11NM60N 100% avalanche tested?
Yes, the STP11NM60N is 100% avalanche tested. - What are the key features of the STP11NM60N?
The key features include low input capacitance and gate charge, low gate input resistance, and high efficiency due to low on-resistance and gate charge. - In what type of applications is the STP11NM60N typically used?
The STP11NM60N is typically used in switching applications, especially in high-efficiency converters. - What is the maximum operating junction temperature (Tj) of the STP11NM60N?
The maximum operating junction temperature is 150°C. - What is the storage temperature range for the STP11NM60N?
The storage temperature range is -65 to 150°C. - What is the peak diode recovery voltage slope (dv/dt) for the STP11NM60N?
The peak diode recovery voltage slope is 15 V/ns.
