Overview
The STD11NM60N-1 is a high-performance N-Channel MOSFET produced by STMicroelectronics. This component is part of the second generation of MDmesh™ Technology, which combines a new vertical structure with the company’s strip layout to achieve one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters and various switching applications.
The STD11NM60N-1 is packaged in a TO-251-3 (IPAK) case and is known for its reliability and versatility in electronic projects. It features a continuous drain current of 10 A, a maximum drain-source voltage of 600 V, and a maximum drain-source on-state resistance of 0.45 Ω. The component is RoHS compliant and has a wide operating temperature range from -55°C to 150°C.
Key Specifications
| Parameter | Value |
|---|---|
| Product Category | MOSFET |
| Technology | Si |
| Package / Case | TO-251-3 (IPAK) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10 A |
| Rds On - Drain-Source Resistance | 0.45 Ω |
| Vgs - Gate-Source Voltage | -25 V, +25 V |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Power Dissipation (Max) | 90 W |
| Rise Time | 18.5 ns |
| Fall Time | 12 ns |
| Typical Turn-On Delay Time | 22 ns |
| Typical Turn-Off Delay Time | 50 ns |
| Input Capacitance (Ciss) (Max) | 850 pF @ 50 V |
| Output Capacitance (Coss) | 44 pF |
| Gate Charge (Qg) (Max) | 31 nC @ 10 V |
Key Features
- High Efficiency: Utilizes the second generation of MDmesh™ Technology, offering low on-resistance and gate charge, making it ideal for high-efficiency converters.
- Low Input Capacitance and Gate Charge: Enhances switching performance and reduces energy losses.
- Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a variety of applications.
- High Current Capability: Supports a continuous drain current of 10 A.
- RoHS Compliant: Lead-free and compliant with RoHS standards.
- Through Hole Mounting: Packaged in a TO-251-3 (IPAK) case for easy integration into various designs.
Applications
- Switching Applications: Ideal for high-frequency switching in power supplies, motor drives, and other high-efficiency converter applications.
- Power Supplies: Suitable for use in DC-DC converters, AC-DC converters, and other power supply systems.
- Motor Drives: Used in motor control circuits due to its high current handling and low on-resistance.
- Industrial and Automotive Systems: Can be used in various industrial and automotive applications requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage of the STD11NM60N-1 MOSFET?
The maximum drain-source voltage is 600 V.
- What is the continuous drain current rating of the STD11NM60N-1?
The continuous drain current rating is 10 A.
- What is the maximum gate-source voltage for the STD11NM60N-1?
The maximum gate-source voltage is ±25 V.
- What is the package type of the STD11NM60N-1 MOSFET?
The package type is TO-251-3 (IPAK).
- Is the STD11NM60N-1 RoHS compliant?
Yes, the STD11NM60N-1 is RoHS compliant.
- What is the maximum operating temperature of the STD11NM60N-1?
The maximum operating temperature is 150°C.
- What is the rise time of the STD11NM60N-1 MOSFET?
The rise time is 18.5 ns.
- What is the typical turn-on delay time of the STD11NM60N-1?
The typical turn-on delay time is 22 ns.
- What is the input capacitance (Ciss) of the STD11NM60N-1?
The input capacitance (Ciss) is 850 pF at 50 V.
- What are some common applications of the STD11NM60N-1 MOSFET?
Common applications include switching applications, power supplies, motor drives, and various industrial and automotive systems.
