STD11NM60N-1
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STMicroelectronics STD11NM60N-1

Manufacturer No:
STD11NM60N-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 10A I-PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STD11NM60N-1 is a high-performance N-Channel MOSFET produced by STMicroelectronics. This component is part of the second generation of MDmesh™ Technology, which combines a new vertical structure with the company’s strip layout to achieve one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters and various switching applications.

The STD11NM60N-1 is packaged in a TO-251-3 (IPAK) case and is known for its reliability and versatility in electronic projects. It features a continuous drain current of 10 A, a maximum drain-source voltage of 600 V, and a maximum drain-source on-state resistance of 0.45 Ω. The component is RoHS compliant and has a wide operating temperature range from -55°C to 150°C.

Key Specifications

Parameter Value
Product Category MOSFET
Technology Si
Package / Case TO-251-3 (IPAK)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 0.45 Ω
Vgs - Gate-Source Voltage -25 V, +25 V
Minimum Operating Temperature -55°C
Maximum Operating Temperature 150°C
Power Dissipation (Max) 90 W
Rise Time 18.5 ns
Fall Time 12 ns
Typical Turn-On Delay Time 22 ns
Typical Turn-Off Delay Time 50 ns
Input Capacitance (Ciss) (Max) 850 pF @ 50 V
Output Capacitance (Coss) 44 pF
Gate Charge (Qg) (Max) 31 nC @ 10 V

Key Features

  • High Efficiency: Utilizes the second generation of MDmesh™ Technology, offering low on-resistance and gate charge, making it ideal for high-efficiency converters.
  • Low Input Capacitance and Gate Charge: Enhances switching performance and reduces energy losses.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a variety of applications.
  • High Current Capability: Supports a continuous drain current of 10 A.
  • RoHS Compliant: Lead-free and compliant with RoHS standards.
  • Through Hole Mounting: Packaged in a TO-251-3 (IPAK) case for easy integration into various designs.

Applications

  • Switching Applications: Ideal for high-frequency switching in power supplies, motor drives, and other high-efficiency converter applications.
  • Power Supplies: Suitable for use in DC-DC converters, AC-DC converters, and other power supply systems.
  • Motor Drives: Used in motor control circuits due to its high current handling and low on-resistance.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STD11NM60N-1 MOSFET?

    The maximum drain-source voltage is 600 V.

  2. What is the continuous drain current rating of the STD11NM60N-1?

    The continuous drain current rating is 10 A.

  3. What is the maximum gate-source voltage for the STD11NM60N-1?

    The maximum gate-source voltage is ±25 V.

  4. What is the package type of the STD11NM60N-1 MOSFET?

    The package type is TO-251-3 (IPAK).

  5. Is the STD11NM60N-1 RoHS compliant?

    Yes, the STD11NM60N-1 is RoHS compliant.

  6. What is the maximum operating temperature of the STD11NM60N-1?

    The maximum operating temperature is 150°C.

  7. What is the rise time of the STD11NM60N-1 MOSFET?

    The rise time is 18.5 ns.

  8. What is the typical turn-on delay time of the STD11NM60N-1?

    The typical turn-on delay time is 22 ns.

  9. What is the input capacitance (Ciss) of the STD11NM60N-1?

    The input capacitance (Ciss) is 850 pF at 50 V.

  10. What are some common applications of the STD11NM60N-1 MOSFET?

    Common applications include switching applications, power supplies, motor drives, and various industrial and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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