STD11NM60N
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STMicroelectronics STD11NM60N

Manufacturer No:
STD11NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD11NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the second generation of MDmesh™ Technology, which combines a new vertical structure with the company’s strip layout to achieve one of the world’s lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)650V
Drain-Source On-State Resistance (RDS(on))< 0.45Ω
Continuous Drain Current (ID)10A
Maximum Gate-Source Voltage (VGS)±25V
Gate Threshold Voltage (VGS(th))2-4V
Maximum Junction Temperature (TJ)150°C
Maximum Power Dissipation (Pd)90W
Package TypesTO-220, TO-220FP, DPAK, IPAK

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • RoHS compliant and lead-free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)

Applications

The STD11NM60N is primarily used in switching applications, particularly in high-efficiency converters where low on-resistance and gate charge are crucial. It is suitable for a variety of power management and control systems that require high performance and reliability.

Q & A

  1. What is the maximum drain-source voltage of the STD11NM60N?
    The maximum drain-source voltage (VDSS) is 650V.
  2. What is the typical on-resistance of the STD11NM60N?
    The typical on-resistance (RDS(on)) is less than 0.45Ω.
  3. What is the maximum continuous drain current of the STD11NM60N?
    The maximum continuous drain current (ID) is 10A.
  4. What are the package types available for the STD11NM60N?
    The package types available are TO-220, TO-220FP, DPAK, and IPAK.
  5. What is the maximum gate-source voltage for the STD11NM60N?
    The maximum gate-source voltage (VGS) is ±25V.
  6. What is the maximum junction temperature of the STD11NM60N?
    The maximum junction temperature (TJ) is 150°C.
  7. Is the STD11NM60N RoHS compliant?
    Yes, the STD11NM60N is RoHS compliant and lead-free.
  8. What is the moisture sensitivity level (MSL) of the STD11NM60N?
    The MSL is 1 (Unlimited).
  9. What are the typical applications of the STD11NM60N?
    The STD11NM60N is typically used in switching applications, especially in high-efficiency converters.
  10. What technology is used in the STD11NM60N?
    The STD11NM60N uses the second generation of MDmesh™ Technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD11NM60N STD11NM65N STD11NM60ND STD13NM60N STD10NM60N STD11NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 11A (Tc) 10A (Tc) 11A (Tc) 10A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V 455mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 550mOhm @ 4A, 10V 470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 29 nC @ 10 V 30 nC @ 10 V 30 nC @ 10 V 19 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 800 pF @ 50 V 850 pF @ 50 V 790 pF @ 50 V 540 pF @ 50 V 547 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 90W (Tc) 110W (Tc) 90W (Tc) 90W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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