STD13NM60N
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STMicroelectronics STD13NM60N

Manufacturer No:
STD13NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 11A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD13NM60N is a revolutionary N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ II technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for high-performance applications requiring efficient power management.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)11 A (Tc)
On-Resistance (Rds(on))0.28 Ω (typ.) at Vgs = 10 V, Id = 5.5 A
Gate Charge (Qg)Low gate charge
Power Dissipation (Pd)90 W (Tc)
PackageTO-252-2 (DPAK)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) of 0.28 Ω (typ.) at Vgs = 10 V, Id = 5.5 A
  • Low gate charge (Qg)
  • High voltage rating of 600 V
  • High current rating of 11 A (Tc)
  • High power dissipation capability of 90 W (Tc)
  • MDmesh™ II technology for enhanced performance
  • Surface mount DPAK package for easy integration

Applications

The STD13NM60N is suitable for a variety of high-performance applications, including:

  • Switch-mode power supplies
  • Motor control and drives
  • Power factor correction (PFC)
  • Uninterruptible power supplies (UPS)
  • High-voltage DC-DC converters

Q & A

  1. What is the voltage rating of the STD13NM60N?
    The voltage rating of the STD13NM60N is 600 V.
  2. What is the current rating of the STD13NM60N?
    The current rating of the STD13NM60N is 11 A (Tc).
  3. What is the on-resistance of the STD13NM60N?
    The on-resistance (Rds(on)) of the STD13NM60N is 0.28 Ω (typ.) at Vgs = 10 V, Id = 5.5 A.
  4. What technology is used in the STD13NM60N?
    The STD13NM60N uses the second generation of MDmesh™ II technology.
  5. What is the package type of the STD13NM60N?
    The STD13NM60N comes in a TO-252-2 (DPAK) package.
  6. What are some typical applications of the STD13NM60N?
    The STD13NM60N is typically used in switch-mode power supplies, motor control and drives, power factor correction (PFC), uninterruptible power supplies (UPS), and high-voltage DC-DC converters.
  7. What is the power dissipation capability of the STD13NM60N?
    The power dissipation capability of the STD13NM60N is 90 W (Tc).
  8. What is the operating temperature range of the STD13NM60N?
    The operating temperature range of the STD13NM60N is -55°C to 150°C.
  9. Is the STD13NM60N RoHS compliant?
    Yes, the STD13NM60N is RoHS compliant.
  10. Where can I find detailed specifications for the STD13NM60N?
    Detailed specifications for the STD13NM60N can be found on the STMicroelectronics official website, as well as on distributor websites such as Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB13NM60N
STB13NM60N
MOSFET N-CH 600V 11A D2PAK

Similar Products

Part Number STD13NM60N STD13NM60ND STD10NM60N STD11NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 24.5 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V 845 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 90W (Tc) 109W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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