Overview
The STD13NM60ND is a high-performance N-channel, enhancement mode Power MOSFET produced by STMicroelectronics. This device utilizes the second generation of MDmesh™ technology and features a new strip-layout vertical structure. It is designed to offer superior switching performance and low on-resistance, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | 650 V |
| Drain Current (Id) | 13 A |
| On-Resistance (Rds(on)) | 0.145 Ω (typical at Vgs = 10 V) |
| Gate Threshold Voltage (Vth) | 2.5 - 4 V |
| Input Capacitance (Ciss) | 2200 pF (typical) |
| Gate Charge (Qg) | 43 nC (typical) |
| Avalanche Current (Ias) | 100% avalanche tested |
Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance (Rds(on))
- 100% avalanche tested
- High dv/dt ruggedness
- Produced using the second generation of MDmesh™ technology
- New strip-layout vertical structure for superior switching performance
Applications
The STD13NM60ND is suitable for various power management applications, including but not limited to:
- Switch-mode power supplies
- Motor control and drives
- Power factor correction (PFC) circuits
- High-frequency switching applications
- Industrial and automotive systems requiring high reliability and performance
Q & A
- What is the drain-source breakdown voltage of the STD13NM60ND?
The drain-source breakdown voltage (Vds) is 650 V. - What is the typical on-resistance of the STD13NM60ND?
The typical on-resistance (Rds(on)) is 0.145 Ω at Vgs = 10 V. - Does the STD13NM60ND have a fast-recovery body diode?
Yes, it features an intrinsic fast-recovery body diode. - What technology is used to produce the STD13NM60ND?
The device is produced using the second generation of MDmesh™ technology. - What is the maximum drain current of the STD13NM60ND?
The maximum drain current (Id) is 13 A. - Is the STD13NM60ND 100% avalanche tested?
Yes, it is 100% avalanche tested. - What are some common applications for the STD13NM60ND?
Common applications include switch-mode power supplies, motor control and drives, power factor correction (PFC) circuits, and high-frequency switching applications. - What is the gate threshold voltage range of the STD13NM60ND?
The gate threshold voltage (Vth) range is 2.5 - 4 V. - What is the typical input capacitance of the STD13NM60ND?
The typical input capacitance (Ciss) is 2200 pF. - What is the typical gate charge of the STD13NM60ND?
The typical gate charge (Qg) is 43 nC.
