STD11NM60ND
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STMicroelectronics STD11NM60ND

Manufacturer No:
STD11NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD11NM60ND is a high-performance N-channel power MOSFET produced by STMicroelectronics. It belongs to the second generation of FDmesh II technology, known for its advanced power management capabilities. This MOSFET is designed to offer high efficiency, reliability, and robustness, making it suitable for a wide range of power electronics applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
RDS(on) (Drain-Source On-Resistance) 370 mΩ (typ.)
ID (Drain Current) 10 A
Package DPAK
Technology FDmesh II

Key Features

  • High Voltage Capability: The STD11NM60ND operates at a drain-source voltage of 600 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With a typical on-resistance of 370 mΩ, this MOSFET minimizes power losses and enhances efficiency.
  • High Current Handling: It can handle a continuous drain current of 10 A, supporting demanding power applications.
  • Advanced FDmesh II Technology: This technology ensures improved switching performance, reduced thermal resistance, and enhanced reliability.
  • DPAK Package: The DPAK package offers a good balance between thermal performance and compactness, making it ideal for various power electronics designs.

Applications

  • Power Supplies: Suitable for high-efficiency switching power supplies, including DC-DC converters and AC-DC converters.
  • Motor Control: Used in motor drive applications, such as in industrial automation and automotive systems.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.
  • Industrial Power Systems: Ideal for use in high-power industrial equipment, such as welding machines and power tools.

Q & A

  1. What is the maximum drain-source voltage of the STD11NM60ND?

    The maximum drain-source voltage is 600 V.

  2. What is the typical on-resistance of the STD11NM60ND?

    The typical on-resistance is 370 mΩ.

  3. What is the maximum continuous drain current of the STD11NM60ND?

    The maximum continuous drain current is 10 A.

  4. What package is the STD11NM60ND available in?

    The STD11NM60ND is available in a DPAK package.

  5. What technology does the STD11NM60ND use?

    The STD11NM60ND uses the FDmesh II technology.

  6. What are some common applications of the STD11NM60ND?

    Common applications include power supplies, motor control, renewable energy systems, and industrial power systems.

  7. Why is the FDmesh II technology important in this MOSFET?

    The FDmesh II technology enhances switching performance, reduces thermal resistance, and improves overall reliability.

  8. How does the DPAK package benefit the STD11NM60ND?

    The DPAK package provides a good balance between thermal performance and compactness, making it suitable for various power electronics designs.

  9. Is the STD11NM60ND suitable for high-power industrial equipment?
  10. Can the STD11NM60ND be used in automotive systems?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD11NM60ND STD13NM60ND STD10NM60ND STD11NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 11A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V 380mOhm @ 5.5A, 10V 600mOhm @ 4A, 10V 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 24.5 nC @ 10 V 20 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 845 pF @ 50 V 577 pF @ 50 V 850 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 90W (Tc) 109W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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