STL120N4F6AG
  • Share:

STMicroelectronics STL120N4F6AG

Manufacturer No:
STL120N4F6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 55A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL120N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed for high-power applications, particularly in the automotive sector, where reliability and robustness are crucial.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
RDS(on) (On-Resistance) 2.9 mΩ (typ.) mΩ
ID (Drain Current) 55 A (continuous), 120 A (peak at 25°C) A
Ptot (Total Power Dissipation) Dependent on package and operating conditions W
TJ (Junction Temperature) -40 to 175 °C
Package PowerFLAT 5x6 -

Key Features

  • Advanced STripFET™ F6 Technology: Enhances performance with a new trench gate structure.
  • Low On-Resistance: 2.9 mΩ typical, reducing power losses and improving efficiency.
  • High Current Capability: Continuous drain current of 55 A and peak current of 120 A at 25°C.
  • Automotive Grade: Designed for reliability and robustness in automotive applications.
  • PowerFLAT 5x6 Package: Compact and efficient package for high-power applications.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power steering, braking systems, and electrical power distribution.
  • Industrial Power Supplies: Used in high-power industrial power supplies and DC-DC converters.
  • Motor Control: Ideal for motor control and drive systems due to its high current and low on-resistance.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STL120N4F6AG?

    40 V.

  2. What is the typical on-resistance of the STL120N4F6AG?

    2.9 mΩ.

  3. What is the continuous drain current of the STL120N4F6AG?

    55 A.

  4. What is the peak drain current of the STL120N4F6AG at 25°C?

    120 A.

  5. What package type is used for the STL120N4F6AG?

    PowerFLAT 5x6.

  6. Is the STL120N4F6AG suitable for automotive applications?

    Yes, it is automotive-grade.

  7. What are some common applications of the STL120N4F6AG?

    Automotive systems, industrial power supplies, motor control, and renewable energy systems.

  8. What is the junction temperature range of the STL120N4F6AG?

    -40 to 175°C.

  9. What technology is used in the STL120N4F6AG?

    STripFET™ F6 technology.

  10. Why is the STL120N4F6AG preferred in high-power applications?

    Due to its low on-resistance and high current capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$2.41
252

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL120N4F6AG STL120N4LF6AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 13A, 10V 3.6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V 4260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 96W (Tc)
Operating Temperature 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA