Overview
The STL120N4F6AG is an N-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology with a new trench gate structure. This device is designed for high-performance applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
The MOSFET is packaged in a PowerFLAT™ 5x6 WF type R package, which offers a wettable flank design for improved solderability and reliability. It features very low on-resistance, low gate charge, and high avalanche ruggedness, making it ideal for switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STL120N4F6AG | - |
| VDS (Drain-Source Voltage) | 40 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 2.9 (typ), 3.6 (max) | mΩ |
| ID (Drain Current, Continuous at TC = 25 °C) | 55 | A |
| ID (Drain Current, Continuous at TC = 100 °C) | 55 | A |
| IDM (Drain Current, Pulsed) | 220 | A |
| PTOT (Total Dissipation at TC = 25 °C) | 115 | W |
| Tstg (Storage Temperature Range) | -55 to 175 | °C |
| Tj (Operating Junction Temperature Range) | -55 to 175 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 1.3 | °C/W |
| Rthj-pcb (Thermal Resistance Junction-PCB) | 31.3 | °C/W |
Key Features
- AEC-Q101 qualified for automotive applications
- Very low on-resistance (RDS(on))
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package (PowerFLAT™ 5x6 WF type R)
Applications
- Switching applications
- Automotive systems
- High-power electronic devices
- Power management systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STL120N4F6AG?
The maximum drain-source voltage (VDS) is 40 V.
- What is the typical on-resistance (RDS(on)) of the STL120N4F6AG?
The typical on-resistance (RDS(on)) is 2.9 mΩ.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 55 A.
- What is the thermal resistance junction-case (Rthj-case)?
The thermal resistance junction-case (Rthj-case) is 1.3 °C/W.
- Is the STL120N4F6AG AEC-Q101 qualified?
Yes, the STL120N4F6AG is AEC-Q101 qualified.
- What type of package does the STL120N4F6AG use?
The STL120N4F6AG uses a PowerFLAT™ 5x6 WF type R package.
- What are the key features of the STL120N4F6AG?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What are the typical applications of the STL120N4F6AG?
The typical applications include switching applications, automotive systems, high-power electronic devices, and power management systems.
- What is the storage temperature range for the STL120N4F6AG?
The storage temperature range is -55 to 175 °C.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 220 A.
