BD438
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STMicroelectronics BD438

Manufacturer No:
BD438
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP 45V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD438 is a complementary silicon power transistor manufactured by STMicroelectronics. It is part of a series that includes the BD433, BD435, and BD437 as their NPN counterparts, with the BD434, BD436, and BD438 being the PNP types. These transistors are designed in a Jedec SOT-32 plastic package and are intended for use in medium power linear and switching applications.

The BD438 is particularly suitable for applications requiring high current handling and robust performance, such as in car-radio output stages and other medium power electronic systems.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 45 V
Collector-Emitter Voltage (VCES) 45 V
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 4 A
Collector Peak Current (ICM) 7 A (t ≤ 10 ms)
Base Current (IB) 1 A
Total Dissipation at Tc ≤ 25°C (Ptot) 36 W
Storage Temperature (Tstg) -65 to 150 °C
Max. Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-case (Rthj-case) 3.5 °C/W
Thermal Resistance Junction-ambient (Rthj-amb) 100 °C/W

Key Features

  • Complementary PNP-NPN Devices: The BD438 is part of a complementary pair with NPN types BD433, BD435, and BD437, allowing for balanced and efficient circuit designs.
  • High Current Handling: Capable of handling collector currents up to 4 A and peak currents up to 7 A for short durations.
  • Medium Power Applications: Suitable for medium power linear and switching applications, including car-radio output stages.
  • Robust Thermal Performance: Features thermal resistance junction-case and junction-ambient to ensure reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: Operates within a storage temperature range of -65 to 150°C and a maximum operating junction temperature of 150°C.

Applications

  • Car-Radio Output Stages: The BD438 is especially suitable for use in car-radio output stages due to its high current handling and robust performance.
  • Medium Power Linear Applications: Ideal for use in medium power linear applications where high current and voltage ratings are required.
  • Switching Applications: Can be used in switching applications where fast switching times and high current handling are necessary.
  • General Purpose Power Electronics: Suitable for various general-purpose power electronic systems requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-base voltage rating of the BD438?

    The collector-base voltage (VCBO) of the BD438 is 45 V.

  2. What is the maximum collector current of the BD438?

    The maximum collector current (IC) of the BD438 is 4 A.

  3. What is the thermal resistance junction-case of the BD438?

    The thermal resistance junction-case (Rthj-case) of the BD438 is 3.5 °C/W.

  4. What are the complementary NPN types of the BD438?

    The complementary NPN types of the BD438 are BD433, BD435, and BD437.

  5. What is the maximum operating junction temperature of the BD438?

    The maximum operating junction temperature (Tj) of the BD438 is 150 °C.

  6. What is the storage temperature range of the BD438?

    The storage temperature range (Tstg) of the BD438 is -65 to 150 °C.

  7. What type of package does the BD438 come in?

    The BD438 comes in a Jedec SOT-32 plastic package.

  8. What are some typical applications of the BD438?

    The BD438 is typically used in car-radio output stages, medium power linear applications, and switching applications.

  9. What is the total dissipation at Tc ≤ 25°C for the BD438?

    The total dissipation at Tc ≤ 25°C (Ptot) for the BD438 is 36 W.

  10. Is the BD438 RoHS compliant?

    Yes, the BD438 is RoHS compliant with an Ecopack1 grade.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 200mA, 2A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Power - Max:36 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Part Number BD438 BD538 BD438S BD438G BD439 BD434 BD435 BD436 BD437
Manufacturer STMicroelectronics onsemi Fairchild Semiconductor onsemi onsemi STMicroelectronics onsemi STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete Obsolete Obsolete Not For New Designs
Transistor Type PNP - PNP PNP NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 4 A - 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 45 V - 45 V 45 V 60 V 22 V 32 V 32 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A - 600mV @ 200mA, 2A 700mV @ 300mA, 3A 800mV @ 300mA, 3A 500mV @ 200mA, 2A 500mV @ 200mA, 2A 500mV @ 200mA, 2A 600mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA - 100µA 100µA (ICBO) 100µA (ICBO) 100µA 100µA (ICBO) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V - 30 @ 10mA, 5V 85 @ 500mA, 1V 40 @ 500mA, 1V 40 @ 10mA, 5V 85 @ 500mA, 1V 40 @ 10mA, 5V 30 @ 10mA, 5V
Power - Max 36 W - 36 W 36 W 36 W 36 W 36 W 36 W 36 W
Frequency - Transition 3MHz - 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature 150°C (TJ) - 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 - TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 - TO-126-3 TO-126 TO-126 SOT-32-3 TO-126 SOT-32-3 SOT-32-3

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