Overview
The STD6N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. The STD6N80K5 is available in the DPAK (TO-252) package and is part of STMicroelectronics' STPOWER family of MOSFETs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 800 | V |
| ID (Drain Current, continuous at TC = 25 °C) | 4.5 | A |
| ID (Drain Current, continuous at TC = 100 °C) | 2.8 | A |
| IDM (Drain Current, pulsed) | 18 | A |
| PTOT (Total Dissipation at TC = 25 °C) | 85 | W |
| VGS (Gate-Source Voltage) | 30 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 1.3 (typ), 1.6 (max) | Ω |
| VGS(th) (Gate Threshold Voltage) | 3-5 | V |
| Tj (Operating Junction Temperature) | -55 to 150 | °C |
| Tstg (Storage Temperature) | -55 to 150 | °C |
Key Features
- Industry’s lowest RDS(on) and best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected for enhanced ESD capability
- Low on-resistance and high efficiency
Applications
The STD6N80K5 is suitable for various switching applications where high power density and efficiency are critical. These include but are not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- Aerospace and defense systems
Q & A
- What is the maximum drain-source voltage of the STD6N80K5?
The maximum drain-source voltage (VDS) is 800 V. - What is the typical on-resistance of the STD6N80K5?
The typical on-resistance (RDS(on)) is 1.3 Ω. - What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 4.5 A. - What is the thermal resistance junction-case for the DPAK package?
The thermal resistance junction-case (Rthj-case) for the DPAK package is 1.47 °C/W. - Is the STD6N80K5 Zener-protected?
Yes, the STD6N80K5 is Zener-protected to enhance its ESD capability. - What are the typical switching times for the STD6N80K5?
The typical turn-on delay time (td(on)) is 16 ns, rise time (tr) is 7.5 ns, turn-off delay time (td(off)) is 28.5 ns, and fall time (tf) is 16 ns. - What is the maximum gate-source voltage?
The maximum gate-source voltage (VGS) is 30 V. - What is the storage temperature range for the STD6N80K5?
The storage temperature range is -55 to 150 °C. - What package type is the STD6N80K5 available in?
The STD6N80K5 is available in the DPAK (TO-252) package. - What are some common applications for the STD6N80K5?
Common applications include power supplies, motor control, industrial automation, and aerospace and defense systems.
