STD4N80K5
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STMicroelectronics STD4N80K5

Manufacturer No:
STD4N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD4N80K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This proprietary vertical structure significantly reduces on-resistance and gate charge, making it ideal for applications requiring superior power density and high efficiency.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)800V
Gate-source voltage (VGS)±30V
Drain current (continuous) at TC = 25 °C3A
Drain current (continuous) at TC = 100 °C1.7A
Drain current (pulsed)12A
Total dissipation at TC = 25 °C60W
Static drain-source on-resistance (RDS(on))2.1 - 2.5
Gate threshold voltage (VGS(th))3 - 5V
Turn-on delay time (td(on))16.5ns
Rise time (tr)15ns
Turn-off delay time (td(off))36ns
Fall time (tf)21ns

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD capability

Applications

The STD4N80K5 is suitable for various switching applications where high power density and efficiency are critical. These include but are not limited to power supplies, motor control, and other high-voltage switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the STD4N80K5?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the typical static drain-source on-resistance (RDS(on)) of the STD4N80K5?
    The typical RDS(on) is 2.1 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 3 A.
  4. What is the total dissipation at 25 °C?
    The total dissipation at 25 °C is 60 W.
  5. What are the key features of the STD4N80K5?
    The key features include industry’s lowest RDS(on) x area, industry’s best figure of merit (FoM), ultra low gate charge, 100% avalanche tested, and Zener-protected for enhanced ESD capability.
  6. What are the typical switching times for the STD4N80K5?
    The typical turn-on delay time is 16.5 ns, rise time is 15 ns, turn-off delay time is 36 ns, and fall time is 21 ns.
  7. What packages are available for the STD4N80K5?
    The STD4N80K5 is available in DPAK, TO-220FP, TO-220, and IPAK packages.
  8. What is the gate threshold voltage range of the STD4N80K5?
    The gate threshold voltage (VGS(th)) range is 3 to 5 V.
  9. Is the STD4N80K5 environmentally compliant?
    Yes, the STD4N80K5 is offered in ECOPACK® packages, which meet various environmental compliance standards.
  10. What are the typical applications for the STD4N80K5?
    The STD4N80K5 is typically used in switching applications such as power supplies and motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD4N80K5 STD7N80K5 STD5N80K5 STD4N90K5 STD6N80K5 STD2N80K5 STD3N80K5 STD4LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 6A (Tc) 4A (Tc) 3A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.2Ohm @ 3A, 10V 1.75Ohm @ 2A, 10V 2.1Ohm @ 1A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 13.4 nC @ 10 V 5 nC @ 10 V 5.3 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V 30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V 360 pF @ 100 V 177 pF @ 100 V 173 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 60W (Tc) 110W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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