Overview
The STD2N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure that significantly reduces on-resistance and gate charge, making it ideal for applications requiring high power density and efficiency.
The device is available in various packages, including DPAK, TO-220FP, TO-220, and IPAK, catering to different design and application needs. It is known for its industry-leading low RDS(on) and best figure of merit (FoM), which are crucial for high-performance switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 800 | V |
| RDS(on) (On-Resistance) | 4.5 Ω (max) | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 2 A | A |
| IDM (Drain Current, pulsed) | 8 A | A |
| PTOT (Total Dissipation at TC = 25 °C) | 45 W | W |
| VGS (Gate-Source Voltage) | ±30 | V |
| Tj (Operating Junction Temperature) | -55 to 150 °C | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 2.78 °C/W (DPAK, TO-220, IPAK) | °C/W |
Key Features
- Industry’s lowest RDS(on) and best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected gate-source diode
- High efficiency and power density due to MDmesh K5 technology
- Available in DPAK, TO-220FP, TO-220, and IPAK packages
Applications
The STD2N80K5 is primarily used in high-voltage switching applications where high efficiency, low on-resistance, and robust avalanche capability are essential. These applications include:
- Switching power supplies
- DC-DC converters
- Motor control and drives
- High-frequency inverters
- Power factor correction (PFC) circuits
Q & A
- What is the maximum drain-source voltage (VDS) of the STD2N80K5?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance (RDS(on)) of the STD2N80K5?
The typical on-resistance (RDS(on)) is 3.5 Ω, with a maximum value of 4.5 Ω.
- What is the continuous drain current (ID) at 25 °C for the STD2N80K5?
The continuous drain current (ID) at 25 °C is 2 A.
- What is the total dissipation power (PTOT) at 25 °C for the STD2N80K5?
The total dissipation power (PTOT) at 25 °C is 45 W.
- What are the available packages for the STD2N80K5?
The STD2N80K5 is available in DPAK, TO-220FP, TO-220, and IPAK packages.
- What technology is used in the STD2N80K5?
The STD2N80K5 uses MDmesh K5 technology.
- What is the operating junction temperature range for the STD2N80K5?
The operating junction temperature range is -55 to 150 °C.
- Is the STD2N80K5 100% avalanche tested?
Yes, the STD2N80K5 is 100% avalanche tested.
- What is the gate-source breakdown voltage (V(BR)GSO) for the STD2N80K5?
The gate-source breakdown voltage (V(BR)GSO) is 30 V.
- What are some typical applications of the STD2N80K5?
Typical applications include switching power supplies, DC-DC converters, motor control and drives, high-frequency inverters, and power factor correction (PFC) circuits.
