STD3N80K5
  • Share:

STMicroelectronics STD3N80K5

Manufacturer No:
STD3N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The device is packaged in a DPAK (TO-252) package, which is a surface-mount type, enhancing its suitability for modern electronic designs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 2.8 (typ.) Ω
ID (Drain Current) 2.5 A
PD (Power Dissipation) 60 W
Package DPAK (TO-252) -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 2.8 Ω (typ.), reducing power losses and improving efficiency.
  • MDmesh K5 Technology: Utilizes STMicroelectronics' proprietary MDmesh K5 technology for enhanced performance and reliability.
  • Surface Mount Package: DPAK (TO-252) package for easy integration into modern surface-mount designs.
  • High Power Dissipation: 60 W, allowing for robust operation in demanding applications.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems requiring high reliability and performance.
  • Aerospace and Defense: Its high voltage and current ratings make it a candidate for use in aerospace and defense applications.

Q & A

  1. What is the maximum drain-source voltage of the STD3N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STD3N80K5?

    The typical on-resistance (RDS(on)) is 2.8 Ω.

  3. What is the maximum drain current of the STD3N80K5?

    The maximum drain current (ID) is 2.5 A.

  4. What is the power dissipation rating of the STD3N80K5?

    The power dissipation rating (PD) is 60 W.

  5. In what package is the STD3N80K5 available?

    The STD3N80K5 is available in a DPAK (TO-252) package.

  6. What technology is used in the STD3N80K5?

    The STD3N80K5 uses STMicroelectronics' MDmesh K5 technology.

  7. What are some common applications of the STD3N80K5?

    Common applications include power supplies, motor control, industrial automation, and aerospace and defense.

  8. Is the STD3N80K5 suitable for high-voltage applications?

    Yes, the STD3N80K5 is designed for high-voltage applications with a rating of 800 V.

  9. How does the MDmesh K5 technology enhance the performance of the STD3N80K5?

    The MDmesh K5 technology enhances performance by providing low on-resistance and high reliability.

  10. Can the STD3N80K5 be used in surface-mount designs?

    Yes, the STD3N80K5 is packaged in a surface-mount DPAK (TO-252) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.68
204

Please send RFQ , we will respond immediately.

Same Series
STF3N80K5
STF3N80K5
MOSFET N-CH 800V 2.5A TO220FP
STU3LN80K5
STU3LN80K5
MOSFET N-CHANNEL 800V 2A IPAK
STP3N80K5
STP3N80K5
MOSFET N-CH 800V 2.5A TO220
STU3N80K5
STU3N80K5
MOSFET N-CH 800V 2.5A IPAK

Similar Products

Part Number STD3N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD2N80K5 STD3LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.25Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 2.63 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V 30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 102 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB