STD3N80K5
  • Share:

STMicroelectronics STD3N80K5

Manufacturer No:
STD3N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The device is packaged in a DPAK (TO-252) package, which is a surface-mount type, enhancing its suitability for modern electronic designs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 2.8 (typ.) Ω
ID (Drain Current) 2.5 A
PD (Power Dissipation) 60 W
Package DPAK (TO-252) -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 2.8 Ω (typ.), reducing power losses and improving efficiency.
  • MDmesh K5 Technology: Utilizes STMicroelectronics' proprietary MDmesh K5 technology for enhanced performance and reliability.
  • Surface Mount Package: DPAK (TO-252) package for easy integration into modern surface-mount designs.
  • High Power Dissipation: 60 W, allowing for robust operation in demanding applications.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems requiring high reliability and performance.
  • Aerospace and Defense: Its high voltage and current ratings make it a candidate for use in aerospace and defense applications.

Q & A

  1. What is the maximum drain-source voltage of the STD3N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STD3N80K5?

    The typical on-resistance (RDS(on)) is 2.8 Ω.

  3. What is the maximum drain current of the STD3N80K5?

    The maximum drain current (ID) is 2.5 A.

  4. What is the power dissipation rating of the STD3N80K5?

    The power dissipation rating (PD) is 60 W.

  5. In what package is the STD3N80K5 available?

    The STD3N80K5 is available in a DPAK (TO-252) package.

  6. What technology is used in the STD3N80K5?

    The STD3N80K5 uses STMicroelectronics' MDmesh K5 technology.

  7. What are some common applications of the STD3N80K5?

    Common applications include power supplies, motor control, industrial automation, and aerospace and defense.

  8. Is the STD3N80K5 suitable for high-voltage applications?

    Yes, the STD3N80K5 is designed for high-voltage applications with a rating of 800 V.

  9. How does the MDmesh K5 technology enhance the performance of the STD3N80K5?

    The MDmesh K5 technology enhances performance by providing low on-resistance and high reliability.

  10. Can the STD3N80K5 be used in surface-mount designs?

    Yes, the STD3N80K5 is packaged in a surface-mount DPAK (TO-252) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.68
204

Please send RFQ , we will respond immediately.

Same Series
STF3N80K5
STF3N80K5
MOSFET N-CH 800V 2.5A TO220FP
STU3LN80K5
STU3LN80K5
MOSFET N-CHANNEL 800V 2A IPAK
STP3N80K5
STP3N80K5
MOSFET N-CH 800V 2.5A TO220
STU3N80K5
STU3N80K5
MOSFET N-CH 800V 2.5A IPAK

Similar Products

Part Number STD3N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD2N80K5 STD3LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.25Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 2.63 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V 30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 102 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP