STD3N80K5
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STMicroelectronics STD3N80K5

Manufacturer No:
STD3N80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2.5A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD3N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The device is packaged in a DPAK (TO-252) package, which is a surface-mount type, enhancing its suitability for modern electronic designs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 2.8 (typ.) Ω
ID (Drain Current) 2.5 A
PD (Power Dissipation) 60 W
Package DPAK (TO-252) -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 2.8 Ω (typ.), reducing power losses and improving efficiency.
  • MDmesh K5 Technology: Utilizes STMicroelectronics' proprietary MDmesh K5 technology for enhanced performance and reliability.
  • Surface Mount Package: DPAK (TO-252) package for easy integration into modern surface-mount designs.
  • High Power Dissipation: 60 W, allowing for robust operation in demanding applications.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
  • Industrial Automation: Applicable in various industrial automation systems requiring high reliability and performance.
  • Aerospace and Defense: Its high voltage and current ratings make it a candidate for use in aerospace and defense applications.

Q & A

  1. What is the maximum drain-source voltage of the STD3N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STD3N80K5?

    The typical on-resistance (RDS(on)) is 2.8 Ω.

  3. What is the maximum drain current of the STD3N80K5?

    The maximum drain current (ID) is 2.5 A.

  4. What is the power dissipation rating of the STD3N80K5?

    The power dissipation rating (PD) is 60 W.

  5. In what package is the STD3N80K5 available?

    The STD3N80K5 is available in a DPAK (TO-252) package.

  6. What technology is used in the STD3N80K5?

    The STD3N80K5 uses STMicroelectronics' MDmesh K5 technology.

  7. What are some common applications of the STD3N80K5?

    Common applications include power supplies, motor control, industrial automation, and aerospace and defense.

  8. Is the STD3N80K5 suitable for high-voltage applications?

    Yes, the STD3N80K5 is designed for high-voltage applications with a rating of 800 V.

  9. How does the MDmesh K5 technology enhance the performance of the STD3N80K5?

    The MDmesh K5 technology enhances performance by providing low on-resistance and high reliability.

  10. Can the STD3N80K5 be used in surface-mount designs?

    Yes, the STD3N80K5 is packaged in a surface-mount DPAK (TO-252) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD3N80K5 STD4N80K5 STD5N80K5 STD6N80K5 STD2N80K5 STD3LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc) 4A (Tc) 4.5A (Tc) 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.25Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V 10.5 nC @ 10 V 5 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 2.63 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V 30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 100 V 175 pF @ 100 V 177 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 102 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 85W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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