STD3LN80K5
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STMicroelectronics STD3LN80K5

Manufacturer No:
STD3LN80K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 2A DPAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STD3LN80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology employs a proprietary vertical structure, enhancing the device's performance and efficiency. The STD3LN80K5 is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-State Resistance) 2.75 Ω
ID (Drain Current) 2 A
PD (Power Dissipation) 45 W
Package DPAK (TO-252)

Key Features

  • High voltage rating of 800 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 2.75 Ω, reducing power losses.
  • High current capability of 2 A.
  • MDmesh™ K5 technology for enhanced performance and efficiency.
  • DPAK (TO-252) package for surface mount applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability and performance.
  • Consumer electronics such as set-top boxes and other high-power devices.

Q & A

  1. What is the maximum drain-source voltage of the STD3LN80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-state resistance of the STD3LN80K5?

    The typical on-state resistance (RDS(on)) is 2.75 Ω.

  3. What is the maximum drain current of the STD3LN80K5?

    The maximum drain current (ID) is 2 A.

  4. What is the power dissipation capability of the STD3LN80K5?

    The power dissipation capability (PD) is 45 W.

  5. In what package is the STD3LN80K5 available?

    The STD3LN80K5 is available in a DPAK (TO-252) package.

  6. What technology is used in the STD3LN80K5?

    The STD3LN80K5 uses MDmesh™ K5 technology.

  7. What are some typical applications for the STD3LN80K5?

    Typical applications include power supplies, motor control, industrial automation, aerospace, and consumer electronics.

  8. Is the STD3LN80K5 suitable for high-power applications?

    Yes, the STD3LN80K5 is designed for high-power applications due to its high voltage and current ratings.

  9. Where can I find detailed specifications for the STD3LN80K5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key.

  10. What are the benefits of using MDmesh™ K5 technology in the STD3LN80K5?

    MDmesh™ K5 technology enhances performance and efficiency by reducing on-state resistance and improving overall device reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.25Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:2.63 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:102 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD3LN80K5 STD3N80K5 STD4LN80K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.25Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 2.63 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 102 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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