STF28N65M2
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STMicroelectronics STF28N65M2

Manufacturer No:
STF28N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF28N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. It features a strip layout and an improved vertical structure, which results in low on-resistance and optimized switching characteristics. The STF28N65M2 is available in the TO-220FP package, making it suitable for a wide range of high-power switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.15 Ω (typ.) Ω
ID (Drain Current, Continuous at TC = 25 °C) 20 A A
ID (Drain Current, Continuous at TC = 100 °C) 13 A A
IDM (Drain Current, Pulsed) 80 A A
VGS (Gate-Source Voltage) ± 25 V V
VGS(th) (Gate Threshold Voltage) 2 - 4 V V
PTOT (Total Dissipation at TC = 25 °C) 170 W W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STF28N65M2 is suitable for various high-efficiency power conversion applications, including:

  • Switching applications
  • High-power DC-DC converters
  • Power supplies
  • Motor control and drives

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF28N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF28N65M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.15 Ω.

  3. What is the continuous drain current (ID) at TC = 25 °C for the STF28N65M2?

    The continuous drain current (ID) at TC = 25 °C is 20 A.

  4. What is the maximum gate-source voltage (VGS) for the STF28N65M2?

    The maximum gate-source voltage (VGS) is ± 25 V.

  5. What are the key features of the STF28N65M2?

    The key features include extremely low gate charge, excellent output capacitance (Coss) profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STF28N65M2?

    The STF28N65M2 is typically used in switching applications, high-power DC-DC converters, power supplies, and motor control and drives.

  7. What package type is the STF28N65M2 available in?

    The STF28N65M2 is available in the TO-220FP package.

  8. What is the total dissipation at TC = 25 °C for the STF28N65M2?

    The total dissipation at TC = 25 °C is 170 W.

  9. Is the STF28N65M2 environmentally compliant?

    Yes, the STF28N65M2 is available in ECOPACK® packages, which meet various environmental compliance standards.

  10. What technology is used in the STF28N65M2?

    The STF28N65M2 uses the advanced MDmesh™ M2 technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF28N65M2 STF18N65M2 STF24N65M2 STF28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 12A (Tc) 16A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 330mOhm @ 6A, 10V 230mOhm @ 8A, 10V 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 20 nC @ 10 V 29 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V 770 pF @ 100 V 1060 pF @ 100 V 1370 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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