STF28N65M2
  • Share:

STMicroelectronics STF28N65M2

Manufacturer No:
STF28N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 20A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF28N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. It features a strip layout and an improved vertical structure, which results in low on-resistance and optimized switching characteristics. The STF28N65M2 is available in the TO-220FP package, making it suitable for a wide range of high-power switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.15 Ω (typ.)
ID (Drain Current, Continuous at TC = 25 °C) 20 A A
ID (Drain Current, Continuous at TC = 100 °C) 13 A A
IDM (Drain Current, Pulsed) 80 A A
VGS (Gate-Source Voltage) ± 25 V V
VGS(th) (Gate Threshold Voltage) 2 - 4 V V
PTOT (Total Dissipation at TC = 25 °C) 170 W W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics

Applications

The STF28N65M2 is suitable for various high-efficiency power conversion applications, including:

  • Switching applications
  • High-power DC-DC converters
  • Power supplies
  • Motor control and drives

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF28N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STF28N65M2?

    The typical static drain-source on-resistance (RDS(on)) is 0.15 Ω.

  3. What is the continuous drain current (ID) at TC = 25 °C for the STF28N65M2?

    The continuous drain current (ID) at TC = 25 °C is 20 A.

  4. What is the maximum gate-source voltage (VGS) for the STF28N65M2?

    The maximum gate-source voltage (VGS) is ± 25 V.

  5. What are the key features of the STF28N65M2?

    The key features include extremely low gate charge, excellent output capacitance (Coss) profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STF28N65M2?

    The STF28N65M2 is typically used in switching applications, high-power DC-DC converters, power supplies, and motor control and drives.

  7. What package type is the STF28N65M2 available in?

    The STF28N65M2 is available in the TO-220FP package.

  8. What is the total dissipation at TC = 25 °C for the STF28N65M2?

    The total dissipation at TC = 25 °C is 170 W.

  9. Is the STF28N65M2 environmentally compliant?

    Yes, the STF28N65M2 is available in ECOPACK® packages, which meet various environmental compliance standards.

  10. What technology is used in the STF28N65M2?

    The STF28N65M2 uses the advanced MDmesh™ M2 technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.84
171

Please send RFQ , we will respond immediately.

Same Series
STW28N65M2
STW28N65M2
MOSFET N-CH 650V 20A TO247
STF28N65M2
STF28N65M2
MOSFET N-CH 650V 20A TO220FP
STP28N65M2
STP28N65M2
MOSFET N-CH 650V 20A TO220

Similar Products

Part Number STF28N65M2 STF18N65M2 STF24N65M2 STF28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 12A (Tc) 16A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 330mOhm @ 6A, 10V 230mOhm @ 8A, 10V 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 20 nC @ 10 V 29 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V 770 pF @ 100 V 1060 pF @ 100 V 1370 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
L78M05CDT
L78M05CDT
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC