STF28N60M2
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STMicroelectronics STF28N60M2

Manufacturer No:
STF28N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 24A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF28N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding power applications.

The MOSFET features a strip layout and an improved vertical structure, which contribute to its excellent performance in various power conversion scenarios.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 0.135 Ω
ID (Drain Current) 22 A
VGS(th) (Threshold Voltage) 2-4 V
PD (Power Dissipation) - -
TJ (Junction Temperature) -55 to 150 °C
Package TO-220FP -

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics
  • Strip layout and improved vertical structure

Applications

The STF28N60M2 is suitable for a variety of high-efficiency power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • High-power DC-DC converters
  • Motor control and drives

Q & A

  1. What is the typical on-resistance of the STF28N60M2?

    The typical on-resistance (RDS(on)) of the STF28N60M2 is 0.135 Ω.

  2. What is the maximum drain-source voltage (VDS) for the STF28N60M2?

    The maximum drain-source voltage (VDS) for the STF28N60M2 is 600 V.

  3. What is the maximum drain current (ID) for the STF28N60M2?

    The maximum drain current (ID) for the STF28N60M2 is 22 A.

  4. What package type is the STF28N60M2 available in?

    The STF28N60M2 is available in the TO-220FP package.

  5. What are the key features of the STF28N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener protection.

  6. What technology is used in the STF28N60M2?

    The STF28N60M2 is developed using the MDmesh™ M2 technology.

  7. What are some typical applications for the STF28N60M2?

    Typical applications include switch-mode power supplies, data centers, solar microinverters, and high-power DC-DC converters.

  8. What is the junction temperature range for the STF28N60M2?

    The junction temperature range for the STF28N60M2 is -55°C to 150°C.

  9. Is the STF28N60M2 RoHS compliant?
  10. Where can I find detailed datasheets and resources for the STF28N60M2?

    Detailed datasheets and resources can be found on the STMicroelectronics official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI28N60M2
STFI28N60M2
MOSFET N-CH 600V 22A I2PAKFP

Similar Products

Part Number STF28N60M2 STF28N65M2 STF18N60M2 STF24N60M2 STF26N60M2 STF28N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 20A (Tc) 13A (Tc) 18A (Tc) 20A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V 180mOhm @ 10A, 10V 280mOhm @ 6.5A, 10V 190mOhm @ 9A, 10V 165mOhm @ 11A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 35 nC @ 10 V 21.5 nC @ 10 V 29 nC @ 10 V - 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 100 V 1440 pF @ 100 V 791 pF @ 100 V 1060 pF @ 100 V - 1500 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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