STF26N60M2
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STMicroelectronics STF26N60M2

Manufacturer No:
STF26N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 20A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF26N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. The STF26N60M2 features a strip layout and an improved vertical structure, which enhances its electrical characteristics and thermal performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
On-Resistance (Rds(on))140 mΩ (typ.)
Drain Current (Id)20 A
PackageTO-220FP
Operating Temperature Range-55°C to 150°C

Key Features

  • MDmesh M2 technology for improved electrical and thermal performance
  • High voltage rating of 600 V
  • Low on-resistance of 140 mΩ (typ.)
  • High drain current capability of 20 A
  • TO-220FP package for easy mounting and heat dissipation
  • Wide operating temperature range from -55°C to 150°C

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Switch-mode power supplies
  • High-frequency switching applications
  • Aerospace and industrial power systems

Q & A

  1. What is the voltage rating of the STF26N60M2?
    The voltage rating of the STF26N60M2 is 600 V.
  2. What is the typical on-resistance of the STF26N60M2?
    The typical on-resistance of the STF26N60M2 is 140 mΩ.
  3. What is the maximum drain current of the STF26N60M2?
    The maximum drain current of the STF26N60M2 is 20 A.
  4. In what package is the STF26N60M2 available?
    The STF26N60M2 is available in the TO-220FP package.
  5. What is the operating temperature range of the STF26N60M2?
    The operating temperature range of the STF26N60M2 is from -55°C to 150°C.
  6. What technology is used in the STF26N60M2?
    The STF26N60M2 uses MDmesh M2 technology.
  7. What are some common applications of the STF26N60M2?
    Common applications include power supplies, motor control, switch-mode power supplies, and high-frequency switching applications.
  8. Is the STF26N60M2 suitable for high-frequency applications?
    Yes, the STF26N60M2 is suitable for high-frequency switching applications due to its low on-resistance and high switching speed.
  9. Can the STF26N60M2 be used in aerospace applications?
    Yes, the STF26N60M2 can be used in aerospace and industrial power systems.
  10. What are the benefits of using MDmesh M2 technology in the STF26N60M2?
    The MDmesh M2 technology provides improved electrical and thermal performance, including lower on-resistance and better heat dissipation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI26N60M2
STFI26N60M2
MOSFET N-CH 600V 20A I2PAKFP

Similar Products

Part Number STF26N60M2 STF6N60M2 STF28N60M2 STF16N60M2 STF24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 4.5A (Ta) 24A (Tc) 12A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 11A, 10V 1.2Ohm @ 2.25A, 10V 150mOhm @ 12A, 10V 320mOhm @ 6A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 8 nC @ 10 V 37 nC @ 10 V 19 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds - 232 pF @ 100 V 1370 pF @ 100 V 700 pF @ 100 V 1060 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 20W (Tc) 30W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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