Overview
The STF24N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications in power conversion. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and overall performance. It is packaged in a TO-220FP package, ensuring robust thermal management and ease of use in various power electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 168 (typ.), 190 (max.) | mΩ |
| ID (Drain Current, continuous at TC = 25 °C) | 18 | A |
| ID (Drain Current, continuous at TC = 100 °C) | 12 | A |
| IDM (Drain Current, pulsed) | 72 | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 30 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 4.2 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 62.5 | °C/W |
Key Features
- Extremely low gate charge (Qg) for efficient switching.
- Excellent output capacitance (Coss) profile.
- 100% avalanche tested for reliability.
- Zener-protected for enhanced robustness.
- Low gate input resistance.
- Optimized switching characteristics due to MDmesh M2 technology.
Applications
- Switching applications.
- LCC (Load Commutated Chopper) converters.
- Resonant converters.
- High efficiency power conversion systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF24N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STF24N60M2?
The typical on-resistance (RDS(on)) is 168 mΩ.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 18 A.
- What is the thermal resistance junction-case (Rthj-case) of the STF24N60M2?
The thermal resistance junction-case (Rthj-case) is 4.2 °C/W.
- What are the key features of the STF24N60M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, Zener-protected, and low gate input resistance.
- What are the typical applications of the STF24N60M2?
The typical applications include switching applications, LCC converters, resonant converters, and high efficiency power conversion systems.
- What is the operating junction temperature range of the STF24N60M2?
The operating junction temperature range is -55 to 150 °C.
- What is the maximum gate-source voltage (VGS) of the STF24N60M2?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the total power dissipation (PTOT) at 25 °C for the STF24N60M2?
The total power dissipation (PTOT) at 25 °C is 30 W.
- What technology is used in the STF24N60M2?
The STF24N60M2 is developed using MDmesh M2 technology.
