STF24N60DM2
  • Share:

STMicroelectronics STF24N60DM2

Manufacturer No:
STF24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF24N60DM2 is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)). This makes it highly suitable for high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Specifications

Parameter Value Unit
Order Code STF24N60DM2
Drain-Source Voltage (VDS) 600 V
Drain Current (ID) at TC = 25 °C 18 A
Drain Current (ID) at TC = 100 °C 11 A
Pulsed Drain Current (IDM) 72 A
Gate-Source Voltage (VGS) ±25 V
Static Drain-Source On-Resistance (RDS(on)) 0.175 (typ.), 0.200 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3 to 5 V
Thermal Resistance Junction-Case (Rthj-case) 4.2 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Package TO-220FP

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance (RDS(on))
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected gate

Applications

  • Switching applications
  • High-efficiency converters
  • Bridge topologies
  • ZVS phase-shift converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF24N60DM2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 18 A at 25 °C and 11 A at 100 °C.

  3. What is the typical on-resistance (RDS(on)) of the STF24N60DM2?

    The typical on-resistance (RDS(on)) is 0.175 Ω.

  4. What is the gate-source voltage (VGS) range?

    The gate-source voltage (VGS) range is ±25 V.

  5. What is the thermal resistance junction-case (Rthj-case) of the STF24N60DM2?

    The thermal resistance junction-case (Rthj-case) is 4.2 °C/W.

  6. What package type is the STF24N60DM2 available in?

    The STF24N60DM2 is available in the TO-220FP package.

  7. What are some key applications of the STF24N60DM2?

    Key applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.

  8. Does the STF24N60DM2 have any special protection features?

    Yes, it has Zener-protected gates and is 100% avalanche tested.

  9. What is the maximum operating junction temperature (Tj) of the STF24N60DM2?

    The maximum operating junction temperature (Tj) range is –55 to 150 °C.

  10. What is the reverse recovery time (trr) of the STF24N60DM2?

    The reverse recovery time (trr) is typically 155 ns at 25 °C and up to 200 ns at 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.12
242

Please send RFQ , we will respond immediately.

Similar Products

Part Number STF24N60DM2 STF24N60M2 STF28N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 190mOhm @ 9A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1060 pF @ 100 V 1500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 Full Pack TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT