STF24N60DM2
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STMicroelectronics STF24N60DM2

Manufacturer No:
STF24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO220
Delivery:
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Product Introduction

Overview

The STF24N60DM2 is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its very low recovery charge (Qrr) and time (trr), combined with low on-resistance (RDS(on)). This makes it highly suitable for high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Specifications

Parameter Value Unit
Order Code STF24N60DM2
Drain-Source Voltage (VDS) 600 V
Drain Current (ID) at TC = 25 °C 18 A
Drain Current (ID) at TC = 100 °C 11 A
Pulsed Drain Current (IDM) 72 A
Gate-Source Voltage (VGS) ±25 V
Static Drain-Source On-Resistance (RDS(on)) 0.175 (typ.), 0.200 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3 to 5 V
Thermal Resistance Junction-Case (Rthj-case) 4.2 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Package TO-220FP

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance (RDS(on))
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected gate

Applications

  • Switching applications
  • High-efficiency converters
  • Bridge topologies
  • ZVS phase-shift converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF24N60DM2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 18 A at 25 °C and 11 A at 100 °C.

  3. What is the typical on-resistance (RDS(on)) of the STF24N60DM2?

    The typical on-resistance (RDS(on)) is 0.175 Ω.

  4. What is the gate-source voltage (VGS) range?

    The gate-source voltage (VGS) range is ±25 V.

  5. What is the thermal resistance junction-case (Rthj-case) of the STF24N60DM2?

    The thermal resistance junction-case (Rthj-case) is 4.2 °C/W.

  6. What package type is the STF24N60DM2 available in?

    The STF24N60DM2 is available in the TO-220FP package.

  7. What are some key applications of the STF24N60DM2?

    Key applications include switching applications, high-efficiency converters, bridge topologies, and ZVS phase-shift converters.

  8. Does the STF24N60DM2 have any special protection features?

    Yes, it has Zener-protected gates and is 100% avalanche tested.

  9. What is the maximum operating junction temperature (Tj) of the STF24N60DM2?

    The maximum operating junction temperature (Tj) range is –55 to 150 °C.

  10. What is the reverse recovery time (trr) of the STF24N60DM2?

    The reverse recovery time (trr) is typically 155 ns at 25 °C and up to 200 ns at 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF24N60DM2 STF24N60M2 STF28N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 190mOhm @ 9A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1060 pF @ 100 V 1500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 Full Pack TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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