2N7002TC
  • Share:

Diodes Incorporated 2N7002TC

Manufacturer No:
2N7002TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002TC, produced by Diodes Incorporated, is an N-channel enhancement mode field effect transistor (MOSFET). This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The 2N7002TC is packaged in a small SOT23 surface-mount package, which is totally lead-free and fully RoHS compliant, as well as halogen and antimony free, aligning with 'green' device standards.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 210 mA
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (VGS = 10V, TJ = +25°C) RDS(on) 5.0
Total Power Dissipation (TA = +25°C) PD 370 mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage (VGS(th))
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free ('Green' Device)
  • Qualified to AEC-Q101 standards for High Reliability

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002TC?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 10V?

    The typical on-state resistance (RDS(ON)) at VGS = 10V is 5.0Ω.

  3. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is from 1.0V to 2.5V.

  4. What is the maximum continuous drain current (ID) at TA = +25°C?

    The maximum continuous drain current (ID) at TA = +25°C is 210mA.

  5. Is the 2N7002TC RoHS compliant?

    Yes, the 2N7002TC is totally lead-free and fully RoHS compliant.

  6. What is the package type of the 2N7002TC?

    The package type is SOT23.

  7. What are the typical applications of the 2N7002TC?

    The typical applications include motor control and power management functions.

  8. What is the thermal resistance, junction to ambient (RθJA), of the 2N7002TC?

    The thermal resistance, junction to ambient (RθJA), is 348°C/W.

  9. Is the 2N7002TC qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

  10. What is the operating temperature range of the 2N7002TC?

    The operating temperature range is from -55°C to +150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
170

Please send RFQ , we will respond immediately.

Same Series
2N7002TC
2N7002TC
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002TC 2N7002T 2N7002TA
Manufacturer Diodes Incorporated onsemi Diodes Incorporated
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 330mW (Ta) 200mW (Ta) 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SC-89-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAV99-13-F
BAV99-13-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23
BZX84B5V6Q-7-F
BZX84B5V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C18-7
BZX84C18-7
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BZX84C16-7-F-31
BZX84C16-7-F-31
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC847CW-7-F
BC847CW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
BSS123ATA
BSS123ATA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
2N7002KX-7
2N7002KX-7
Diodes Incorporated
MOSFET N-CH 60V SOT23-3
74LVC1G08FW5-7
74LVC1G08FW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6