2N7002TC
  • Share:

Diodes Incorporated 2N7002TC

Manufacturer No:
2N7002TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002TC, produced by Diodes Incorporated, is an N-channel enhancement mode field effect transistor (MOSFET). This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The 2N7002TC is packaged in a small SOT23 surface-mount package, which is totally lead-free and fully RoHS compliant, as well as halogen and antimony free, aligning with 'green' device standards.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 210 mA
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (VGS = 10V, TJ = +25°C) RDS(on) 5.0
Total Power Dissipation (TA = +25°C) PD 370 mW
Thermal Resistance, Junction to Ambient RθJA 348 °C/W

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage (VGS(th))
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free ('Green' Device)
  • Qualified to AEC-Q101 standards for High Reliability

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002TC?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 10V?

    The typical on-state resistance (RDS(ON)) at VGS = 10V is 5.0Ω.

  3. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is from 1.0V to 2.5V.

  4. What is the maximum continuous drain current (ID) at TA = +25°C?

    The maximum continuous drain current (ID) at TA = +25°C is 210mA.

  5. Is the 2N7002TC RoHS compliant?

    Yes, the 2N7002TC is totally lead-free and fully RoHS compliant.

  6. What is the package type of the 2N7002TC?

    The package type is SOT23.

  7. What are the typical applications of the 2N7002TC?

    The typical applications include motor control and power management functions.

  8. What is the thermal resistance, junction to ambient (RθJA), of the 2N7002TC?

    The thermal resistance, junction to ambient (RθJA), is 348°C/W.

  9. Is the 2N7002TC qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability.

  10. What is the operating temperature range of the 2N7002TC?

    The operating temperature range is from -55°C to +150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
170

Please send RFQ , we will respond immediately.

Same Series
2N7002TC
2N7002TC
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002TC 2N7002T 2N7002TA
Manufacturer Diodes Incorporated onsemi Diodes Incorporated
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 330mW (Ta) 200mW (Ta) 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SC-89-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAT54AQ-7-F
BAT54AQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
BZX84C6V2TS-7-F
BZX84C6V2TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 6.2V SOT363
BZX84C2V4Q-13-F
BZX84C2V4Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C4V7-7
BZX84C4V7-7
Diodes Incorporated
DIODE ZENER 4.7V 300MW SOT23-3
BZX84B5V6-7-F-79
BZX84B5V6-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C6V8-7-F-31
BZX84C6V8-7-F-31
Diodes Incorporated
DIODE ZENER 6.8V 300MW SOT23
BC847AT-7-F
BC847AT-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT523
BC807-40W-7
BC807-40W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
MMBT3904T-7-F-79
MMBT3904T-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
BSS123WQ-7-F
BSS123WQ-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT323