Overview
The 2N7002T is an N-Channel enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance while providing rugged, reliable, and fast switching performance. It is designed for low-voltage, low-current applications and is suitable for a wide range of uses, including small servo motor control and power MOSFET gate drivers.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGR | 60 | V |
| Gate-Source Voltage (Continuous) | VGSS | ±20 | V |
| Gate-Source Voltage (Non-Repetitive, tp < 50 ms) | VGSS | ±40 | V |
| Maximum Drain Current (Continuous) | ID | 115 | mA |
| Maximum Drain Current (Pulsed) | IDM | 800 | mA |
| Maximum Power Dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | 1.6 to 7.5 | Ω |
| Forward Transconductance | gFS | 80 to 356.5 | mS |
| Input Capacitance | Ciss | 37.8 to 50 | pF |
| Turn-On Delay Time | tD(ON) | 5.85 to 20 | ns |
| Turn-Off Delay Time | tD(OFF) | 12.5 to 20 | ns |
Key Features
- High density cell design for extremely low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable performance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Ultra-small surface mount package
- Pb-free and RoHS compliant
- Halogen and antimony free
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Motor control
- Power management functions
- Other switching applications requiring low voltage and low current
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the 2N7002T?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the maximum continuous drain current (ID) of the 2N7002T?
The maximum continuous drain current (ID) is 115 mA.
- What is the gate threshold voltage (VGS(th)) range of the 2N7002T?
The gate threshold voltage (VGS(th)) range is from 1.0 V to 2.0 V.
- What is the typical on-state resistance (RDS(ON)) of the 2N7002T?
The typical on-state resistance (RDS(ON)) is between 1.6 Ω and 7.5 Ω.
- What are the operating and storage temperature ranges for the 2N7002T?
The operating and storage temperature ranges are from -55°C to 150°C.
- Is the 2N7002T RoHS compliant?
- What are some typical applications of the 2N7002T?
Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the maximum power dissipation (PD) of the 2N7002T?
The maximum power dissipation (PD) is 200 mW.
- What is the forward transconductance (gFS) range of the 2N7002T?
The forward transconductance (gFS) range is from 80 mS to 356.5 mS.
- How fast is the switching speed of the 2N7002T?
The 2N7002T has fast switching speeds, with turn-on and turn-off delay times ranging from 5.85 ns to 20 ns and 12.5 ns to 20 ns, respectively.
