STW58N65DM2AG
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STMicroelectronics STW58N65DM2AG

Manufacturer No:
STW58N65DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 48A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW58N65DM2AG is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast-recovery diode series. This automotive-grade MOSFET is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. With its robust characteristics, it is ideal for use in various power management and control systems.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.058 Ω
ID (Drain Current) 48 A
Qrr (Reverse Recovery Charge) Very Low nC
trr (Reverse Recovery Time) Very Low ns

Key Features

  • Automotive-grade N-channel Power MOSFET
  • MDmesh™ DM2 technology for fast recovery diode
  • Very low recovery charge (Qrr) and time (trr)
  • High drain current capability of 48 A
  • Low on-state resistance of 0.058 Ω
  • High voltage rating of 650 V

Applications

  • Automotive systems (e.g., electric vehicles, hybrid vehicles)
  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-efficiency power management systems
  • Industrial power electronics

Q & A

  1. What is the drain-source voltage rating of the STW58N65DM2AG?

    The drain-source voltage rating is 650 V.

  2. What is the typical on-state resistance of the STW58N65DM2AG?

    The typical on-state resistance is 0.058 Ω.

  3. What is the maximum drain current of the STW58N65DM2AG?

    The maximum drain current is 48 A.

  4. What technology does the STW58N65DM2AG use?

    The STW58N65DM2AG uses MDmesh™ DM2 technology.

  5. Why is the STW58N65DM2AG suitable for automotive applications?

    It is automotive-grade and offers very low recovery charge and time, making it suitable for high-efficiency automotive systems.

  6. What are some common applications of the STW58N65DM2AG?

    Common applications include automotive systems, power supplies, motor control, and high-efficiency power management systems.

  7. What is the significance of low Qrr and trr in the STW58N65DM2AG?

    Low Qrr and trr contribute to higher efficiency and reduced switching losses in power management systems.

  8. Is the STW58N65DM2AG suitable for industrial power electronics?

    Yes, it is suitable for industrial power electronics due to its high voltage and current ratings and low on-state resistance.

  9. What package options are available for the STW58N65DM2AG?

    The specific package details are not provided in the sources, but typically, such MOSFETs are available in packages like TO-247, D2PAK, etc.

  10. How does the MDmesh™ DM2 technology benefit the performance of the STW58N65DM2AG?

    The MDmesh™ DM2 technology enhances the MOSFET's performance by providing fast recovery diode characteristics, which improve efficiency and reduce switching losses.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW58N65DM2AG STWA58N65DM2AG STW50N65DM2AG STW58N60DM2AG
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Preliminary Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 48A (Tc) 28A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V - 87mOhm @ 19A, 10V 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA - 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V - 70 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V - 3200 pF @ 100 V 4100 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 360W (Tc) - 300W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 Long Leads TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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