STW58N60DM2AG
  • Share:

STMicroelectronics STW58N60DM2AG

Manufacturer No:
STW58N60DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 50A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW58N60DM2AG is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its very low recovery charge (Qrr) and time (trr). This MOSFET is designed to meet the stringent requirements of automotive applications and is AEC-Q101 qualified, ensuring reliability and performance in demanding environments.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)50 A (Tc)
On-Resistance (Rds(on))0.052 Ohm (typ)
Power Dissipation (Pd)360 W (Tc)
Package TypeThrough Hole TO-247-3
QualificationAEC-Q101 qualified

Key Features

  • Fast-recovery body diode
  • Very low recovery charge (Qrr) and time (trr)
  • High voltage and current handling capabilities
  • AEC-Q101 qualified for automotive applications
  • MDmesh™ DM2 technology for enhanced performance

Applications

The STW58N60DM2AG is primarily designed for automotive applications, including but not limited to:

  • Power management systems
  • Motor control and drive systems
  • High-power switching applications
  • Electric vehicle systems

Q & A

  1. What is the voltage rating of the STW58N60DM2AG?
    The voltage rating of the STW58N60DM2AG is 600 V.
  2. What is the current rating of the STW58N60DM2AG?
    The current rating of the STW58N60DM2AG is 50 A (Tc).
  3. What is the typical on-resistance of the STW58N60DM2AG?
    The typical on-resistance of the STW58N60DM2AG is 0.052 Ohm.
  4. What package type does the STW58N60DM2AG use?
    The STW58N60DM2AG uses a Through Hole TO-247-3 package.
  5. Is the STW58N60DM2AG qualified for automotive applications?
    Yes, the STW58N60DM2AG is AEC-Q101 qualified for automotive applications.
  6. What technology does the STW58N60DM2AG employ?
    The STW58N60DM2AG employs MDmesh™ DM2 technology.
  7. What are some common applications of the STW58N60DM2AG?
    The STW58N60DM2AG is used in power management systems, motor control and drive systems, high-power switching applications, and electric vehicle systems.
  8. What is the significance of the fast-recovery body diode in the STW58N60DM2AG?
    The fast-recovery body diode in the STW58N60DM2AG reduces recovery charge and time, enhancing overall performance and efficiency.
  9. Where can I find detailed specifications for the STW58N60DM2AG?
    Detailed specifications for the STW58N60DM2AG can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.
  10. What is the power dissipation capability of the STW58N60DM2AG?
    The power dissipation capability of the STW58N60DM2AG is 360 W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.61
45

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW58N60DM2AG STW58N65DM2AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V 4100 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN