STW58N60DM2AG
  • Share:

STMicroelectronics STW58N60DM2AG

Manufacturer No:
STW58N60DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 50A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW58N60DM2AG is a high-voltage N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its very low recovery charge (Qrr) and time (trr). This MOSFET is designed to meet the stringent requirements of automotive applications and is AEC-Q101 qualified, ensuring reliability and performance in demanding environments.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Current Rating (Id)50 A (Tc)
On-Resistance (Rds(on))0.052 Ohm (typ)
Power Dissipation (Pd)360 W (Tc)
Package TypeThrough Hole TO-247-3
QualificationAEC-Q101 qualified

Key Features

  • Fast-recovery body diode
  • Very low recovery charge (Qrr) and time (trr)
  • High voltage and current handling capabilities
  • AEC-Q101 qualified for automotive applications
  • MDmesh™ DM2 technology for enhanced performance

Applications

The STW58N60DM2AG is primarily designed for automotive applications, including but not limited to:

  • Power management systems
  • Motor control and drive systems
  • High-power switching applications
  • Electric vehicle systems

Q & A

  1. What is the voltage rating of the STW58N60DM2AG?
    The voltage rating of the STW58N60DM2AG is 600 V.
  2. What is the current rating of the STW58N60DM2AG?
    The current rating of the STW58N60DM2AG is 50 A (Tc).
  3. What is the typical on-resistance of the STW58N60DM2AG?
    The typical on-resistance of the STW58N60DM2AG is 0.052 Ohm.
  4. What package type does the STW58N60DM2AG use?
    The STW58N60DM2AG uses a Through Hole TO-247-3 package.
  5. Is the STW58N60DM2AG qualified for automotive applications?
    Yes, the STW58N60DM2AG is AEC-Q101 qualified for automotive applications.
  6. What technology does the STW58N60DM2AG employ?
    The STW58N60DM2AG employs MDmesh™ DM2 technology.
  7. What are some common applications of the STW58N60DM2AG?
    The STW58N60DM2AG is used in power management systems, motor control and drive systems, high-power switching applications, and electric vehicle systems.
  8. What is the significance of the fast-recovery body diode in the STW58N60DM2AG?
    The fast-recovery body diode in the STW58N60DM2AG reduces recovery charge and time, enhancing overall performance and efficiency.
  9. Where can I find detailed specifications for the STW58N60DM2AG?
    Detailed specifications for the STW58N60DM2AG can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.
  10. What is the power dissipation capability of the STW58N60DM2AG?
    The power dissipation capability of the STW58N60DM2AG is 360 W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.61
45

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW58N60DM2AG STW58N65DM2AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V 4100 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA