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STB30N65M5
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STMicroelectronics STB30N65M5

Manufacturer No:
STB30N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 22A D2PAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STB30N65M5 is an N-channel power MOSFET from STMicroelectronics, part of their innovative MDmesh M5 series. This device leverages STMicroelectronics' proprietary vertical process technology to offer high performance and reliability. The STB30N65M5 is designed to handle high voltage and current applications, making it a versatile component for various power management systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-Resistance)0.125 Ω (typical)
ID (Drain Current)22 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
Tj (Junction Temperature)-55°C to 150°C

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance (RDS(on)) of 0.125 Ω, reducing power losses and improving efficiency.
  • High current handling capability of up to 22 A.
  • MDmesh M5 technology for enhanced performance and reliability.
  • Wide operating temperature range from -55°C to 150°C.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power.
  • High-power audio systems.

Q & A

  1. What is the maximum drain-source voltage of the STB30N65M5?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance of the STB30N65M5?
    The typical on-resistance (RDS(on)) is 0.125 Ω.
  3. What is the maximum drain current of the STB30N65M5?
    The maximum drain current (ID) is 22 A.
  4. What technology is used in the STB30N65M5?
    The STB30N65M5 uses STMicroelectronics' proprietary MDmesh M5 technology.
  5. What is the operating temperature range of the STB30N65M5?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications of the STB30N65M5?
    Common applications include power supplies, motor control systems, industrial power systems, renewable energy systems, and high-power audio systems.
  7. Where can I find the datasheet for the STB30N65M5?
    The datasheet can be found on the official STMicroelectronics website or through distributors like Mouser.
  8. What is the significance of the MDmesh M5 technology in the STB30N65M5?
    The MDmesh M5 technology enhances performance and reliability by improving the device's electrical characteristics and thermal management.
  9. Can the STB30N65M5 be used in high-power audio systems?
    Yes, the STB30N65M5 can be used in high-power audio systems due to its high current and voltage handling capabilities.
  10. Is the STB30N65M5 suitable for renewable energy applications?
    Yes, it is suitable for renewable energy applications such as solar and wind power systems due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB30N65M5 STB34N65M5 STB38N65M5 STB35N65M5 STB31N65M5 STB32N65M5 STB20N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 28A (Tc) 30A (Tc) 27A (Tc) 22A (Tc) 24A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 139mOhm @ 11A, 10V 110mOhm @ 14A, 10V 95mOhm @ 15A, 10V 98mOhm @ 13.5A, 10V 148mOhm @ 11A, 10V 119mOhm @ 12A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 62.5 nC @ 10 V 71 nC @ 10 V 83 nC @ 10 V 45 nC @ 10 V 72 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 100 V 2700 pF @ 100 V 3000 pF @ 100 V 3750 pF @ 100 V 1865 pF @ 100 V 3320 pF @ 100 V 1434 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 140W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 150W (Tc) 150W (Tc) 130W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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