STB38N65M5
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STMicroelectronics STB38N65M5

Manufacturer No:
STB38N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 30A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB38N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology, which combines high performance with reliability. The STB38N65M5 is designed to offer superior electrical characteristics, making it suitable for a wide range of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (On-State Resistance)0.073 Ω (typical)
ID (Drain Current)30 A
PackageD2PAK
ManufacturerSTMicroelectronics

Key Features

  • Worldwide best RDS(on) * area, providing low on-state resistance.
  • Higher VDS rating and high dv/dt capability, ensuring robust performance under various operating conditions.
  • Excellent switching performance, making it ideal for efficient and compact SMPS (Switch-Mode Power Supply) designs.
  • High junction temperature rating, enhancing reliability and durability.

Applications

The STB38N65M5 is suitable for various power management applications, including but not limited to:

  • Switch-Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • Power Factor Correction (PFC) Circuits
  • High-Power Electronic Devices

Q & A

  1. What is the drain-source voltage rating of the STB38N65M5?
    The drain-source voltage rating of the STB38N65M5 is 650 V.
  2. What is the typical on-state resistance of the STB38N65M5?
    The typical on-state resistance (RDS(on)) of the STB38N65M5 is 0.073 Ω.
  3. What is the maximum drain current of the STB38N65M5?
    The maximum drain current (ID) of the STB38N65M5 is 30 A.
  4. In what package is the STB38N65M5 available?
    The STB38N65M5 is available in the D2PAK package.
  5. Who is the manufacturer of the STB38N65M5?
    The STB38N65M5 is manufactured by STMicroelectronics.
  6. What are some key features of the STB38N65M5?
    The STB38N65M5 features worldwide best RDS(on) * area, higher VDS rating, high dv/dt capability, and excellent switching performance.
  7. What are some common applications of the STB38N65M5?
    The STB38N65M5 is commonly used in SMPS, DC-DC converters, motor control systems, PFC circuits, and high-power electronic devices.
  8. What is the significance of the MDmesh V technology in the STB38N65M5?
    The MDmesh V technology in the STB38N65M5 enhances its electrical characteristics, providing better performance and reliability.
  9. How does the STB38N65M5 handle high junction temperatures?
    The STB38N65M5 has a high junction temperature rating, which enhances its reliability and durability under various operating conditions.
  10. Where can I find detailed specifications and datasheets for the STB38N65M5?
    Detailed specifications and datasheets for the STB38N65M5 can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB38N65M5 STB8N65M5 STB18N65M5 STB30N65M5 STB31N65M5 STB32N65M5 STB34N65M5 STB35N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 7A (Tc) 15A (Tc) 22A (Tc) 22A (Tc) 24A (Tc) 28A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 15A, 10V 600mOhm @ 3.5A, 10V 220mOhm @ 7.5A, 10V 139mOhm @ 11A, 10V 148mOhm @ 11A, 10V 119mOhm @ 12A, 10V 110mOhm @ 14A, 10V 98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V 15 nC @ 10 V 31 nC @ 10 V 64 nC @ 10 V 45 nC @ 10 V 72 nC @ 10 V 62.5 nC @ 10 V 83 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 100 V 690 pF @ 100 V 1240 pF @ 100 V 2880 pF @ 100 V 1865 pF @ 100 V 3320 pF @ 100 V 2700 pF @ 100 V 3750 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 70W (Tc) 110W (Tc) 140W (Tc) 150W (Tc) 150W (Tc) 190W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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