Overview
The STB18N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer superior power density and outstanding efficiency, making it ideal for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (Vds) | 650 | V |
| Maximum Gate-Source Voltage (Vgs) | ±25 | V |
| Maximum Drain Current (Id) | 15 | A |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Static Drain-Source On-Resistance (RDS(on)) | 0.198 (typ.) | Ω |
| Total Gate Charge (Qg) | 31 | nC |
| Rise Time (tr) | 7 | nS |
| Output Capacitance (Coss) | 32 | pF |
| Maximum Power Dissipation (Pd) | 110 | W |
Key Features
- Worldwide best RDS(on) * area, offering extremely low on-resistance.
- Higher VDSS rating and high dv/dt capability, enhancing the device's robustness and reliability.
- Excellent switching performance, making it suitable for high-frequency applications.
- 100% avalanche tested, ensuring durability and reliability under various operating conditions.
- Available in various packages including DPAK, TO-220FP, TO-220, and TO-247, providing flexibility in design and implementation.
Applications
The STB18N65M5 is primarily used in switching applications where high power density and efficiency are crucial. These include:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Automotive systems requiring high reliability and performance
- Industrial power management and control systems
Q & A
- What is the maximum drain-source voltage of the STB18N65M5?
The maximum drain-source voltage (Vds) is 650 V.
- What is the maximum gate-source voltage of the STB18N65M5?
The maximum gate-source voltage (Vgs) is ±25 V.
- What is the maximum drain current of the STB18N65M5?
The maximum drain current (Id) is 15 A.
- What is the maximum junction temperature of the STB18N65M5?
The maximum junction temperature (Tj) is 150 °C.
- What is the typical on-resistance of the STB18N65M5?
The typical static drain-source on-resistance (RDS(on)) is 0.198 Ω.
- In what packages is the STB18N65M5 available?
The STB18N65M5 is available in DPAK, TO-220FP, TO-220, and TO-247 packages.
- What are the key features of the STB18N65M5?
The key features include worldwide best RDS(on) * area, higher VDSS rating, high dv/dt capability, excellent switching performance, and 100% avalanche testing.
- What are the typical applications of the STB18N65M5?
The typical applications include switching applications, power supplies, DC-DC converters, motor control, automotive systems, and industrial power management.
- What is the maximum power dissipation of the STB18N65M5?
The maximum power dissipation (Pd) is 110 W.
- What is the total gate charge of the STB18N65M5?
The total gate charge (Qg) is 31 nC.
