Overview
The STB11N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is based on the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency.
The STB11N65M5 is available in various packages, including DPAK, D²PAK, TO-220FP, and TO-220, catering to different design and application needs. It features a high drain-source breakdown voltage of 650 V and a low typical on-resistance of 0.43 Ω, ensuring excellent switching performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ Tjmax | 650 | V |
| RDS(on) max. | 0.48 | Ω |
| ID (continuous) at TC = 25 °C | 9 | A |
| ID (continuous) at TC = 100 °C | 5.6 | A |
| IDM (pulsed) | 36 | A |
| PTOT Total dissipation at TC = 25 °C | 85 | W |
| VGS Gate-source voltage | ±25 | V |
| Tj Operating junction temperature range | -55 to 150 | °C |
| Tstg Storage temperature range | -55 to 150 | °C |
| Rthj-case Thermal resistance junction-case | 1.47 | °C/W |
| Rthj-amb Thermal resistance junction-ambient | 62.5 | °C/W |
Key Features
- Extremely low RDS(on) of 0.43 Ω typical, ensuring high efficiency and low power losses.
- Low gate charge and input capacitance, enhancing switching performance.
- Excellent switching characteristics, making it suitable for high-frequency applications.
- 100% avalanche tested, providing reliability in harsh operating conditions.
- High drain-source breakdown voltage of 650 V, ensuring robustness against voltage spikes.
- Wide operating junction temperature range from -55 °C to 150 °C.
Applications
The STB11N65M5 is particularly suited for various switching applications that require high power handling and superior efficiency. Some of the key application areas include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source breakdown voltage of the STB11N65M5?
The maximum drain-source breakdown voltage is 650 V.
- What is the typical on-resistance of the STB11N65M5?
The typical on-resistance is 0.43 Ω.
- What are the available package types for the STB11N65M5?
The device is available in DPAK, D²PAK, TO-220FP, and TO-220 packages.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 9 A.
- What is the operating junction temperature range of the STB11N65M5?
The operating junction temperature range is from -55 °C to 150 °C.
- Is the STB11N65M5 100% avalanche tested?
Yes, the STB11N65M5 is 100% avalanche tested.
- What are some typical applications for the STB11N65M5?
Typical applications include power supplies, motor control systems, high-frequency switching circuits, and industrial and automotive power management systems.
- What is the thermal resistance junction-case for the TO-220FP package?
The thermal resistance junction-case for the TO-220FP package is 1.47 °C/W.
- What is the maximum gate-source voltage?
The maximum gate-source voltage is ±25 V.
- What is the storage temperature range for the STB11N65M5?
The storage temperature range is from -55 °C to 150 °C.
