STF11N65M5
  • Share:

STMicroelectronics STF11N65M5

Manufacturer No:
STF11N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF11N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 technology. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. The STF11N65M5 is available in the TO-220FP package, which provides excellent thermal performance and ease of use in various power management systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Drain-Source Voltage Vds V 650
Maximum Gate-Source Voltage Vgs V 25
Maximum Drain Current (continuous) at T = 25°C Id A 9
Maximum Drain Current (continuous) at T = 100°C Id A 5.6
Maximum Drain Current (pulsed) Id A 36
Maximum Drain-Source On-State Resistance Rds(on) Ω 0.43 (typ.)
Maximum Power Dissipation at T = 25°C Pd W 25
Maximum Junction Temperature Tj °C 150
Rise Time tr nS 10
Output Capacitance Coss pF 18
Thermal Resistance Junction-Case Rthj-case °C/W 1.47
Thermal Resistance Junction-Ambient Rthj-amb °C/W 62.5

Key Features

  • Extremely low on-resistance (Rds(on)) of 0.43 Ω (typ.)
  • High maximum drain current of 9 A (continuous at T = 25°C)
  • Maximum drain-source voltage of 650 V
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • Zener-protected gate
  • Available in TO-220FP package for good thermal performance

Applications

  • Switching applications, including DC-DC converters and power supplies
  • Motor control and drive systems
  • Power management in industrial and automotive systems
  • High-efficiency power conversion systems
  • Aerospace and defense applications requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STF11N65M5 MOSFET?

    The maximum drain-source voltage is 650 V.

  2. What is the typical on-resistance (Rds(on)) of the STF11N65M5?

    The typical on-resistance is 0.43 Ω.

  3. What is the maximum continuous drain current at 25°C for the STF11N65M5?

    The maximum continuous drain current at 25°C is 9 A.

  4. What is the maximum junction temperature for the STF11N65M5?

    The maximum junction temperature is 150°C.

  5. What package is the STF11N65M5 available in?

    The STF11N65M5 is available in the TO-220FP package.

  6. What are some key features of the STF11N65M5?

    Key features include extremely low on-resistance, low gate charge, excellent switching performance, and 100% avalanche testing.

  7. What are typical applications for the STF11N65M5?

    Typical applications include switching applications, motor control, power management in industrial and automotive systems, and high-efficiency power conversion systems.

  8. What is the thermal resistance junction-case for the STF11N65M5?

    The thermal resistance junction-case is 1.47°C/W.

  9. Is the STF11N65M5 Zener-protected?

    Yes, the STF11N65M5 has a Zener-protected gate.

  10. What is the output capacitance (Coss) of the STF11N65M5?

    The output capacitance is 18 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:644 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.29
276

Please send RFQ , we will respond immediately.

Same Series
STD11N65M5
STD11N65M5
MOSFET N CH 650V 9A DPAK
STP11N65M5
STP11N65M5
MOSFET N-CH 650V 9A TO220
STF11N65M5
STF11N65M5
MOSFET N-CH 650V 9A TO220FP

Similar Products

Part Number STF11N65M5 STF15N65M5 STF16N65M5 STF12N65M5 STF21N65M5 STF18N65M5 STF11N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 11A (Tc) 12A (Tc) 8.5A (Tc) 17A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 430mOhm @ 4.3A, 10V 190mOhm @ 8.5A, 10V 220mOhm @ 7.5A, 10V 670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 22 nC @ 10 V 50 nC @ 10 V 31 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 900 pF @ 100 V 1950 pF @ 100 V 1240 pF @ 100 V 410 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-5 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24