STF11N65M5
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STMicroelectronics STF11N65M5

Manufacturer No:
STF11N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 9A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 technology. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. The STF11N65M5 is available in the TO-220FP package, which provides excellent thermal performance and ease of use in various power management systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Drain-Source Voltage Vds V 650
Maximum Gate-Source Voltage Vgs V 25
Maximum Drain Current (continuous) at T = 25°C Id A 9
Maximum Drain Current (continuous) at T = 100°C Id A 5.6
Maximum Drain Current (pulsed) Id A 36
Maximum Drain-Source On-State Resistance Rds(on) Ω 0.43 (typ.)
Maximum Power Dissipation at T = 25°C Pd W 25
Maximum Junction Temperature Tj °C 150
Rise Time tr nS 10
Output Capacitance Coss pF 18
Thermal Resistance Junction-Case Rthj-case °C/W 1.47
Thermal Resistance Junction-Ambient Rthj-amb °C/W 62.5

Key Features

  • Extremely low on-resistance (Rds(on)) of 0.43 Ω (typ.)
  • High maximum drain current of 9 A (continuous at T = 25°C)
  • Maximum drain-source voltage of 650 V
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • Zener-protected gate
  • Available in TO-220FP package for good thermal performance

Applications

  • Switching applications, including DC-DC converters and power supplies
  • Motor control and drive systems
  • Power management in industrial and automotive systems
  • High-efficiency power conversion systems
  • Aerospace and defense applications requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STF11N65M5 MOSFET?

    The maximum drain-source voltage is 650 V.

  2. What is the typical on-resistance (Rds(on)) of the STF11N65M5?

    The typical on-resistance is 0.43 Ω.

  3. What is the maximum continuous drain current at 25°C for the STF11N65M5?

    The maximum continuous drain current at 25°C is 9 A.

  4. What is the maximum junction temperature for the STF11N65M5?

    The maximum junction temperature is 150°C.

  5. What package is the STF11N65M5 available in?

    The STF11N65M5 is available in the TO-220FP package.

  6. What are some key features of the STF11N65M5?

    Key features include extremely low on-resistance, low gate charge, excellent switching performance, and 100% avalanche testing.

  7. What are typical applications for the STF11N65M5?

    Typical applications include switching applications, motor control, power management in industrial and automotive systems, and high-efficiency power conversion systems.

  8. What is the thermal resistance junction-case for the STF11N65M5?

    The thermal resistance junction-case is 1.47°C/W.

  9. Is the STF11N65M5 Zener-protected?

    Yes, the STF11N65M5 has a Zener-protected gate.

  10. What is the output capacitance (Coss) of the STF11N65M5?

    The output capacitance is 18 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:644 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF11N65M5 STF15N65M5 STF16N65M5 STF12N65M5 STF21N65M5 STF18N65M5 STF11N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 11A (Tc) 12A (Tc) 8.5A (Tc) 17A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 430mOhm @ 4.3A, 10V 190mOhm @ 8.5A, 10V 220mOhm @ 7.5A, 10V 670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 22 nC @ 10 V 50 nC @ 10 V 31 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 900 pF @ 100 V 1950 pF @ 100 V 1240 pF @ 100 V 410 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-5 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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