STF11N65M5
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STMicroelectronics STF11N65M5

Manufacturer No:
STF11N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 9A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11N65M5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 technology. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and superior efficiency. The STF11N65M5 is available in the TO-220FP package, which provides excellent thermal performance and ease of use in various power management systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Drain-Source Voltage Vds V 650
Maximum Gate-Source Voltage Vgs V 25
Maximum Drain Current (continuous) at T = 25°C Id A 9
Maximum Drain Current (continuous) at T = 100°C Id A 5.6
Maximum Drain Current (pulsed) Id A 36
Maximum Drain-Source On-State Resistance Rds(on) Ω 0.43 (typ.)
Maximum Power Dissipation at T = 25°C Pd W 25
Maximum Junction Temperature Tj °C 150
Rise Time tr nS 10
Output Capacitance Coss pF 18
Thermal Resistance Junction-Case Rthj-case °C/W 1.47
Thermal Resistance Junction-Ambient Rthj-amb °C/W 62.5

Key Features

  • Extremely low on-resistance (Rds(on)) of 0.43 Ω (typ.)
  • High maximum drain current of 9 A (continuous at T = 25°C)
  • Maximum drain-source voltage of 650 V
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • Zener-protected gate
  • Available in TO-220FP package for good thermal performance

Applications

  • Switching applications, including DC-DC converters and power supplies
  • Motor control and drive systems
  • Power management in industrial and automotive systems
  • High-efficiency power conversion systems
  • Aerospace and defense applications requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STF11N65M5 MOSFET?

    The maximum drain-source voltage is 650 V.

  2. What is the typical on-resistance (Rds(on)) of the STF11N65M5?

    The typical on-resistance is 0.43 Ω.

  3. What is the maximum continuous drain current at 25°C for the STF11N65M5?

    The maximum continuous drain current at 25°C is 9 A.

  4. What is the maximum junction temperature for the STF11N65M5?

    The maximum junction temperature is 150°C.

  5. What package is the STF11N65M5 available in?

    The STF11N65M5 is available in the TO-220FP package.

  6. What are some key features of the STF11N65M5?

    Key features include extremely low on-resistance, low gate charge, excellent switching performance, and 100% avalanche testing.

  7. What are typical applications for the STF11N65M5?

    Typical applications include switching applications, motor control, power management in industrial and automotive systems, and high-efficiency power conversion systems.

  8. What is the thermal resistance junction-case for the STF11N65M5?

    The thermal resistance junction-case is 1.47°C/W.

  9. Is the STF11N65M5 Zener-protected?

    Yes, the STF11N65M5 has a Zener-protected gate.

  10. What is the output capacitance (Coss) of the STF11N65M5?

    The output capacitance is 18 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:644 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STD11N65M5
STD11N65M5
MOSFET N CH 650V 9A DPAK
STP11N65M5
STP11N65M5
MOSFET N-CH 650V 9A TO220
STF11N65M5
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MOSFET N-CH 650V 9A TO220FP

Similar Products

Part Number STF11N65M5 STF15N65M5 STF16N65M5 STF12N65M5 STF21N65M5 STF18N65M5 STF11N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 11A (Tc) 12A (Tc) 8.5A (Tc) 17A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 430mOhm @ 4.3A, 10V 190mOhm @ 8.5A, 10V 220mOhm @ 7.5A, 10V 670mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 22 nC @ 10 V 45 nC @ 10 V 22 nC @ 10 V 50 nC @ 10 V 31 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V 816 pF @ 100 V 1250 pF @ 100 V 900 pF @ 100 V 1950 pF @ 100 V 1240 pF @ 100 V 410 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-5 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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